Enhancement of thermoelectric figure of merit in β-Zn4Sb3 by indium doping control

被引：25

作者：

Wei, Pai-Chun ^{[1
]}

Yang, Chun-Chuen ^{[2
]}

Chen, Jeng-Lung ^{[3
]}

Sankar, Raman ^{[4
]}

Chen, Chi-Liang ^{[1
,3
]}

Hsu, Chia-Hao ^{[1
]}

Chang, Chung-Chieh ^{[1
]}

Chen, Cheng-Lung ^{[1
]}

Dong, Chung-Li ^{[5
]}

Chou, Fang-Cheng ^{[4
]}

Chen, Kuei-Hsien ^{[6
]}

Wu, Maw-Kuen ^{[1
]}

Chen, Yang-Yuan ^{[1
]}

机构：

[1] Acad Sinica, Inst Phys, Taipei 11529, Taiwan

[2] Chung Yuan Christian Univ, Dept Phys, Chungli 32023, Taiwan

[3] Natl Synchrotron Radiat Res Ctr, Hsinchu 30076, Taiwan

[4] Natl Taiwan Univ, Ctr Condensed Matter Sci, Taipei 10617, Taiwan

[5] Tamkang Univ, Dept Phys, Tamsui 25137, Taiwan

[6] Acad Sinica, Inst Atom & Mol Sci, Taipei 10617, Taiwan

来源：

APPLIED PHYSICS LETTERS | 2015年 / 107卷 / 12期

关键词：

PHASE-TRANSITIONS; CRYSTAL-STRUCTURE; PERFORMANCE; STABILITY; ZN4SB3;

D O I：

10.1063/1.4931361

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We demonstrate the control of phase composition in Bridgman-grown beta-Zn4Sb3 crystals by indium doping, an effective way to overcome the difficulty of growing very pure beta-Zn4Sb3 thermoelectric material. The crystal structures are characterized by Rietveld refinement with synchrotron X-ray diffraction data. The results show an anisotropic lattice expansion in In-doped beta-Zn4Sb3 wherein the zinc atoms are partially substituted by indium ones at 36f site of R-3c symmetry. Through the elimination of ZnSb phase, all the three individual thermoelectric properties are simultaneously improved, i.e., increasing electrical conductivity and Seebeck coefficient while reducing thermal conductivity. Under an optimal In concentration (x = 0.05), pure phase beta-Zn4Sb3 crystal can be obtained, which possesses a high figure of merit (ZT) of 1.4 at 700 K. (C) 2015 AIP Publishing LLC.

引用

页数：5

共 21 条

[1] High-performance bulk thermoelectrics with all-scale hierarchical architectures [J].