First-principles calculations-based model for the reactive ion etching of metal oxide surfaces

被引:7
作者
David, Melanie [1 ]
Muhida, Rifki [2 ]
Roman, Tanglaw [1 ]
Nakanishi, Hiroshi [1 ]
Dino, Wilson [3 ]
Kasai, Hideaki [1 ]
Takano, Fumiyoshi [4 ]
Shima, Hisashi [4 ]
Akinaga, Hiro [4 ]
机构
[1] Osaka Univ, Grad Sch Engn, Dept Precis Sci Technol & Appl Phys, Suita, Osaka 5650871, Japan
[2] Int Islamic Univ Malaysia, Fac Engn, Dept Engn Sci, Kuala Lumpur 50727, Malaysia
[3] Osaka Univ, Ctr Promot Res Nanosci & Nanotechnol, Osaka 5608531, Japan
[4] Natl Inst Adv Ind Sci & Technol, Nanotechnol Res Inst, Tsukuba, Ibaraki 3058568, Japan
基金
日本学术振兴会;
关键词
Reactive ion etching (RIE); Metal oxides; Nickel; Iron; Density functional theory;
D O I
10.1016/j.vacuum.2008.04.033
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
A model for the RIE process design of metal oxide surfaces based on density functional theory-based total energy calculations has been developed. Cluster and periodic systems were employed in order to develop the model and hence gain a deeper understanding of the process mechanisms on an atomic scale. In the present study, Fe3O4 was used for the cluster system, and NiO for the periodic system as metal oxide surfaces. Possible gas combinations and by-products were studied with the aim of producing a more efficient and effective RIE process for metal oxide thin films. This study can be considered as fundamental groundwork required for the understanding of the reactivity in the etching of metal oxide surfaces and a means of decreasing the processing period of RIE for metal oxide thin films by optimum selection of gas combinations with a knowledge of their probable by-products. (C) 2008 Elsevier Ltd. All rights reserved.
引用
收藏
页码:599 / 601
页数:3
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