Field effect transistor photodetector based on two dimensional SnSe2

被引:3
|
作者
Meng Xian-Cheng [1 ]
Tian He [1 ]
An Xia [1 ]
Yuan Shuo [1 ]
Fan Chao [1 ]
Wang Meng-Jun [1 ]
Zheng Hong-Xing [1 ]
机构
[1] Hebei Univ Technol, Sch Elect & Informat Engn, Tianjin 300401, Peoples R China
基金
中国国家自然科学基金;
关键词
tin diselenide; micromechanical exfoliation; field-effect transistor; photodetector; GROWTH;
D O I
10.7498/aps.69.20191960
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
Two dimensional materials have been attracting intensive interest due to their unique physical and optoelectronic properties. As an emerging two dimensional materials, SnSe2 have shown a considerable potential for next-generation electronic and optoelectronic. Herein, SnSe2 bulk crystals have been prepared by a chemical vapour transport method with high purity tin and selenium powder as precursors. Then SnSe2 multilayers has been successfully prepared by a micromechanical exfoliation method from the SnSe2 bulk crystals. The phase structures and elemental composition of the bulk crystal are investigated using an X-Ray diffractometer, an X-ray photoelectrons spectrometer and a Raman spectrometer. And the morphologies are observed using an optical microscope, an atomic force microscope and a transmission electron microscope. The measurement results show that the SnSe2 bulks are single crystals with a high crystallization and purity. The SnSe2 multilayers have a size of 25-35 tm and a thickness of 1.4 nm. To detect the electronic and photoresponse characteristics of the SnSe2 multilayers, a field effect transistor based on such SnSe2 are fabricated via a photolithographic-pattern-transfer method. The transistor has a smooth surface without wrinkles and bubbles, and also has a good contact with Au electrodes. The transistor shows a linear output characteristic and an obvious rectification. The on/off ratio of the device is 47.9 and the electron mobility is 0.25 cm(2).V-1.s(-1). As a photodetector, the field effect transistor exhibits obvious photoresponse to three visible lights with the wavelengths of 405, 532, and 650 nm. As the lasers are turned on and the device is under illuminations of three visible lights, the current increase rapidly to a saturation state. Then as the lasers are switched off, the current decrease and recover to the original state. The drain-source current can alternate between high and low states rapidly and reversibly, which demonstrates photoresponse characteristics of the devices are stable and sensible. Notably, it shows a strongest response to the 405 nm light at an intensity of 5.4 mW/cm(2) with a high responsivity of 19.83 A/W, a good external quantum efficiency of 6.07 x 10(3)%, a normalized detectivity of 4.23 x 10(10) Jones, and a fast response time of 23.8 ms. The results of this work demonstrate that layered SnSe2 can be a suitable and excellent candidate for visible light photodetector and has a huge potential for high-performance optoelectronic devices.
引用
收藏
页数:7
相关论文
共 22 条
  • [1] HIGH-RATE, GAS-PHASE GROWTH OF MOS2 NESTED INORGANIC FULLERENES AND NANOTUBES
    FELDMAN, Y
    WASSERMAN, E
    SROLOVITZ, DJ
    TENNE, R
    [J]. SCIENCE, 1995, 267 (5195) : 222 - 225
  • [2] Designing the shape evolution of SnSe2 nanosheets and their optoelectronic properties
    Huang, Yun
    Xu, Kai
    Wang, Zhenxing
    Shifa, Tofik Ahmed
    Wang, Qisheng
    Wang, Feng
    Jiang, Chao
    He, Jun
    [J]. NANOSCALE, 2015, 7 (41) : 17375 - 17380
  • [3] SINGLE-LAYER MOS2
    JOENSEN, P
    FRINDT, RF
    MORRISON, SR
    [J]. MATERIALS RESEARCH BULLETIN, 1986, 21 (04) : 457 - 461
  • [4] Substrate effects in high gain, low operating voltage SnSe2 photoconductor
    Krishna, Murali
    Kallatt, Sangeeth
    Majumdar, Kausik
    [J]. NANOTECHNOLOGY, 2018, 29 (03)
  • [5] Simulation study of the colliding bulge and surface micro-jet of metal flyers driven by detonation
    Liu Jun
    Fu Zheng
    Feng Qi-Jing
    Wang Pei
    [J]. ACTA PHYSICA SINICA, 2015, 64 (23)
  • [6] Approaching the Schottky-Mott limit in van der Waals metal-semiconductor junctions
    Liu, Yuan
    Guo, Jian
    Zhu, Enbo
    Liao, Lei
    Lee, Sung-Joon
    Ding, Mengning
    Shakir, Imran
    Gambin, Vincent
    Huang, Yu
    Duan, Xiangfeng
    [J]. NATURE, 2018, 557 (7707) : 696 - +
  • [7] Optical and electrical properties of SnSe2 and SnSe thin films prepared by spray pyrolysis
    Martinez-Escobar, D.
    Ramachandran, Manoj
    Sanchez-Juarez, A.
    Narro Rios, Jorge Sergio
    [J]. THIN SOLID FILMS, 2013, 535 : 390 - 393
  • [8] Moonshik K, 2018, J NANOSCI NANOTECHNO, V18, P4243
  • [9] An Extrinsic Approach Toward Achieving Fast Response and Self-Powered Photodetector
    Mukhokosi, Emma P.
    Krupanidhi, Saluru B.
    Nanda, Karuna K.
    [J]. PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2018, 215 (21):
  • [10] Electric field effect in atomically thin carbon films
    Novoselov, KS
    Geim, AK
    Morozov, SV
    Jiang, D
    Zhang, Y
    Dubonos, SV
    Grigorieva, IV
    Firsov, AA
    [J]. SCIENCE, 2004, 306 (5696) : 666 - 669