Mid- to long-wavelength infrared surface plasmon properties in doped zinc oxides

This work investigates properties of surface plasmons on doped metal oxides in the 2-20 mu m wavelength regime. By varying the stoichiometry in pulse laser deposited Ga and Al doped ZnO, the plasmonic properties can be controlled via a fluctuating free carrier concentration. This deterministic approach may enable one to develop the most appropriate stoichometry of ZnAlO and ZnGaO in regards to specific plasmonic applications for particular IR wavelengths. Presented are theoretical and experimental investigations pertaining to ZnAlO and ZnGaO as surface plasmon host materials. Samples are fabricated via pulsed laser deposition and characterized by infrared ellipsometry and Hall-effect measurements. Complex permittivity spectra are presented, as well as plasmon properties such as the field propagation lengths and penetration depths, in the infrared range of interest. Drude considerations are utilized to determine how the optical properties may change with doping. Finite element simulations verify these plasmonic properties. These materials not only offer potential use as IR plasmon hosts for sensor applications, but also offer new integrated device possibilities due to stoichiometric control of electrical and optical properties.