Evidence for defect-assisted tunneling and recombination at extremely low current in InGaN/GaN-based LEDs

被引：20

作者：

De Santi, Carlo ^{[1
]}

Buffolo, Matteo ^{[1
]}

Renso, Nicola ^{[1
]}

Neviani, Andrea ^{[1
]}

Meneghesso, Gaudenzio ^{[1
]}

Zanoni, Enrico ^{[1
]}

Meneghini, Matteo ^{[1
]}

机构：

[1] Univ Padua, Dept Informat Engn, Via Gradenigo 6-B, I-35131 Padua, Italy

来源：

APPLIED PHYSICS EXPRESS | 2019年 / 12卷 / 05期

关键词：

YELLOW LUMINESCENCE; LEAKAGE CURRENT; GAN; MECHANISMS; MODEL;

D O I：

10.7567/1882-0786/ab10e3

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

This paper investigates the electroluminescence characteristics of InGaN-based LEDs at extremely low current levels (down to 500 pA), i.e. in and below the region where recombination dynamics are governed by Shockley-Read-Hall recombination. Two different regimes are identified in the current-voltage characteristics, a first one below 100 nA associated to emission at wavelength below midgap, and a second one below 100 mu A with a dominant emission at the quantum well wavelength. The experimental findings are interpreted by considering that, at extremely low current, carriers can tunnel towards states deeper than midgap, thus undergoing radiative recombination through defects. (C) 2019 The Japan Society of Applied Physics

引用

页数：4

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