An S-Band GaN MMIC High Power Amplifier With 50 W Output Power and 55% Power Added Efficiency

被引:0
作者
Giofre, Rocco [1 ]
Costanzo, Ferdinando [1 ]
Colangeli, Sergio [1 ]
Ciccognani, Walter [1 ]
Sotgia, Manuela [2 ]
Cirillo, Maurizio [2 ]
Limiti, Ernesto [1 ]
机构
[1] Univ Rome, EEDept, Via Politecn 1, I-00133 Rome, Italy
[2] Rheinmetall Italy, Via Affile 102, Rome, Italy
来源
2018 ASIA-PACIFIC MICROWAVE CONFERENCE PROCEEDINGS (APMC) | 2018年
关键词
GaN; HPA; S-Band; AESA;
D O I
暂无
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
This paper presents the experimental results of a monolithic microwave integrated circuit (MMIC) high power amplifier (HPA) in Gallium Nitride (GaN) technology conceived for S-Band active electronically scanned array systems. The MMIC is based on a three-stage architecture and it is realized on a commercially available 0.25 mu m GaN process. In order to maximize the efficiency and output power of the HPA, the harmonic terminations of the devices in the final stage were carefully optimized to actuate a class F working condition. Thanks to this, the MMIC is able to deliver an output power higher than 50 W with an associated gain and power added efficiency greater than 36 dB and 55%, respectively, in a fractional bandwidth larger than 13% within the S-Band. Even if the HPA comprises three stages, the overall chip area is limited to 6x5 mm(2).
引用
收藏
页码:554 / 556
页数:3
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