An S-Band GaN MMIC High Power Amplifier With 50 W Output Power and 55% Power Added Efficiency

被引：0

作者：

Giofre, Rocco ^{[1
]}

Costanzo, Ferdinando ^{[1
]}

Colangeli, Sergio ^{[1
]}

Ciccognani, Walter ^{[1
]}

Sotgia, Manuela ^{[2
]}

Cirillo, Maurizio ^{[2
]}

Limiti, Ernesto ^{[1
]}

机构：

[1] Univ Rome, EEDept, Via Politecn 1, I-00133 Rome, Italy

[2] Rheinmetall Italy, Via Affile 102, Rome, Italy

来源：

2018 ASIA-PACIFIC MICROWAVE CONFERENCE PROCEEDINGS (APMC) | 2018年

关键词：

GaN; HPA; S-Band; AESA;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper presents the experimental results of a monolithic microwave integrated circuit (MMIC) high power amplifier (HPA) in Gallium Nitride (GaN) technology conceived for S-Band active electronically scanned array systems. The MMIC is based on a three-stage architecture and it is realized on a commercially available 0.25 mu m GaN process. In order to maximize the efficiency and output power of the HPA, the harmonic terminations of the devices in the final stage were carefully optimized to actuate a class F working condition. Thanks to this, the MMIC is able to deliver an output power higher than 50 W with an associated gain and power added efficiency greater than 36 dB and 55%, respectively, in a fractional bandwidth larger than 13% within the S-Band. Even if the HPA comprises three stages, the overall chip area is limited to 6x5 mm(2).

引用

页码：554 / 556

页数：3

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