SiGe HBTs Featuring fT>400GHz at Room Temperature

被引：30

作者：

Geynet, B. ^{[1
,2
]}

Chevalier, P. ^{[1
]}

Vandelle, B. ^{[1
]}

Brossard, F. ^{[1
]}

Zerounian, N. ^{[3
]}

Buczko, M. ^{[1
]}

Gloria, D. ^{[1
]}

Aniel, F. ^{[3
]}

Dambrine, G. ^{[2
]}

Danneville, F. ^{[2
]}

Dutartre, D. ^{[1
]}

Chantre, A. ^{[1
]}

机构：

[1] STMicroelectronics, 850 Rue Jean Monnet, F-38926 Crolles, France

[2] CNRS, USTL, IEMN DHS, UMR 8520, F-59652 Villeneuve Dascq, France

[3] Univ Paris Sud, CNRS, Inst Elect Fondamentale, UMR 8622, F-91405 Orsay, France

来源：

PROCEEDINGS OF THE 2008 BIPOLAR/BICMOS CIRCUITS AND TECHNOLOGY MEETING | 2008年

关键词：

Heterojunction bipolar transistor (HBT); silicon-germanium (SiGe); thermal budget; activation; diffusion; cut-off frequency; terahertz;

D O I：

10.1109/BIPOL.2008.4662727

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper presents the results of investigations on process thermal budget reduction in order to increase the operation frequency of SiGe HBTs. We describe the variations of dc and ac characteristics of the devices with the spike annealing temperature. Record peak f(T) values of 410GHz and 640GHz are reported at room and cryogenic temperatures respectively.

引用

页码：121 / +

页数：2

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SiGe HBTs Featuring fT&gt;400GHz at Room Temperature

SiGe HBTs Featuring fT>400GHz at Room Temperature