Temperature-dependent characteristics of non-volatile transistor memory based on a polypeptide

被引：13
|
作者：
Liang, Lijuan [1 ]
Fukushima, Tomoo [1 ]
Nakamura, Kazuki [1 ]
Uemura, Sei [2 ]
Kamata, Toshihide [2 ]
Kobayashi, Norihisa [1 ]
机构：
[1] Chiba Univ, Grad Sch Adv Integrat Sci, Dept Image & Mat Sci, Inage Ku, Chiba 2638522, Japan
[2] Natl Inst Adv Ind Sci & Technol, Flexible Elect Res Ctr, Tsukuba, Ibaraki 3058565, Japan
来源：
JOURNAL OF MATERIALS CHEMISTRY C | 2014年 / 2卷 / 05期
关键词：
ORGANIC TRANSISTORS; POLYMER; PERFORMANCE; DEVICES; COPOLYMER; INSULATOR; CIRCUITS; FET;
D O I：
10.1039/c3tc31777c
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
A thin-film transistor (TFT) non-volatile memory (NVM) device was fabricated using a-helix poly(gamma-methyl-L-glutamate) (PMLG) as a ferroelectric layer. In order to study the mechanism of memory driving, the temperature dependence of transfer characteristics and memory performance was investigated. It was revealed that the cooperative movement of the large dipole moment along the rod-like main chain and that of the small dipole moment in the side chain played an important role in the memory function.
引用
收藏
页码：879 / 883
页数：5
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