Generation of Transfonn-Limited Picosecond Pulses at 1.0 μm from a Gain Switched Semiconductor Laser Diode

被引:0
作者
Teh, Peh Siong [1 ]
Alam, Shaif-ul [1 ]
Chan, Ho-Yin [1 ]
Shepherd, David P. [1 ]
Richardson, David J. [1 ]
机构
[1] Univ Southampton, Optoelect Res Ctr, Southampton, Hants, England
来源
2013 IEEE 4TH INTERNATIONAL CONFERENCE ON PHOTONICS (ICP) | 2013年
基金
英国工程与自然科学研究理事会;
关键词
Semiconductor lasers; Laser mode locking; PS;
D O I
暂无
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
We report the generation of short, transform-limited, similar to 18 ps optical pulses from an external fiber Bragg grating (FBG) stabilized semiconductor laser diode. Up to 7.2 pJ of pulse energy and a peak power of 400mW were achieved when operating at a repetition frequency of 832.6 MHz, a multiples of the cavity round trip frequency. A small detuning in the repetition frequency resulted in broader optical pulses. We have shown experimentally that an active mode-locking rather than gain switching mechanism is behind the generation of transform limited optical pulses at the optimum operating frequency.
引用
收藏
页码:239 / 242
页数:4
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