Co2FeSi/GaAs/(Al,Ga)As spin light-emitting diodes:: Competition between spin injection and ultrafast spin alignment

被引：89

作者：

Ramsteiner, M. ^{[1
]}

Brandt, O. ^{[1
]}

Flissikowski, T. ^{[1
]}

Grahn, H. T. ^{[1
]}

Hashimoto, M. ^{[1
]}

Herfort, J. ^{[1
]}

Kostial, H. ^{[1
]}

机构：

[1] Paul Drude Inst Festkorperelekt, D-10117 Berlin, Germany

来源：

PHYSICAL REVIEW B | 2008年 / 78卷 / 12期

关键词：

D O I：

10.1103/PhysRevB.78.121303

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Electrical injection from the Heusler alloy Co(2)FeSi into (Al,Ga)As is investigated for different growth temperatures T(G) of the injector layer. Depending on T(G), the spin polarization of injected electrons in the semiconductor is determined by two competing mechanisms: actual spin injection at the Co(2)FeSi/(Al,Ga)As interface and ultrafast spin alignment in the (Al,Ga)As layer. This layer is strongly affected by the thermally activated diffusion of Co, Fe, and Si during the growth of the Co(2)FeSi layers. Despite the electrical compensation and magnetic transformation in the underlying semiconductor structure, a spin-injection efficiency of at least 50% is achieved as deduced from the analysis of electroluminescence and time-resolved photoluminescence data.

引用

页数：4

共 16 条

[1] Spin injection and relaxation in ferromagnet-semiconductor heterostructures [J].

Adelmann, C ;

Lou, X ;

Strand, J ;

Palmstrom, CJ ;

Crowell, PA .

PHYSICAL REVIEW B, 2005, 71 (12)

[2]

BRANDT O, UNPUB, P37404

[3] Spin injection from the Heusler alloy CO2MnGe into Al0.1Ga0.9As/GaAs heterostructures -: art. no. 102107 [J].

Dong, XY ;

Adelmann, C ;

Xie, JQ ;

Palmstrom, CJ ;

Lou, X ;

Strand, J ;

Crowell, PA ;

Barnes, JP ;

Petford-Long, AK .

APPLIED PHYSICS LETTERS, 2005, 86 (10) :1-3

[4] Efficient electrical spin injection from a magnetic metal/tunnel barrier contact into a semiconductor [J].

Hanbicki, AT ;

Jonker, BT ;

Itskos, G ;

Kioseoglou, G ;

Petrou, A .

APPLIED PHYSICS LETTERS, 2002, 80 (07) :1240-1242

[5] Atomic ordering and interlayer diffusion Of Co2FeSi films grown on GaAs(001) studied by transmission electron microscopy [J].

Hashimoto, M. ;

Trampert, A. ;

Herfort, J. ;

Ploog, K. H. .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2007, 25 (04) :1453-1459

[6] Thermal stability and atomic ordering of epitaxial Heusler alloy Co2FeSi films grown on GaAs(001) -: art. no. 104902 [J].

Hashimoto, M ;

Herfort, J ;

Schönherr, HP ;

Ploog, KH .

JOURNAL OF APPLIED PHYSICS, 2005, 98 (10)

[7] Monitoring the sign reversal of the valence band exchange integral in (Ga,Mn)As [J].

Heimbrodt, W ;

Hartmann, T ;

Klar, PJ ;

Lampalzer, M ;

Stolz, W ;

Volz, K ;

Schaper, A ;

Treutmann, W ;

von Nidda, HAK ;

Loidl, A ;

Ruf, T ;

Sapega, VF .

PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 2001, 10 (1-3) :175-180

[8] GaFeAs: a diluted magnetic semiconductor grown by molecular beam epitaxy [J].

Hirose, S ;

Yamaura, M ;

Haneda, S ;

Hara, K ;

Munekata, H .

THIN SOLID FILMS, 2000, 371 (1-2) :272-277

[9] Highly spin-polarized room-temperature tunnel injector for semiconductor spintronics using MgO(100) [J].

Jiang, X ;

Wang, R ;

Shelby, RM ;

Macfarlane, RM ;

Bank, SR ;

Harris, JS ;

Parkin, SSP .

PHYSICAL REVIEW LETTERS, 2005, 94 (05)

[10] Spin injection from Fe3Si into GaAs [J].

Kawaharazuka, A ;

Ramsteiner, M ;

Herfort, J ;

Schönherr, HP ;

Kostial, H ;

Ploog, KH .

APPLIED PHYSICS LETTERS, 2004, 85 (16) :3492-3494

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