Thermoelectric Enhancement of Silicon Membranes by Ultrathin Amorphous Films

被引：28

作者：

George, Anthony ^{[1
]}

Yanagisawa, Ryoto ^{[1
]}

Anufriev, Roman ^{[1
]}

He, Jinghan ^{[1
]}

Yoshie, Naoko ^{[1
]}

Tsujii, Naohito ^{[3
,4
]}

Guo, Quansheng ^{[5
]}

Mori, Takao ^{[3
,4
,5
]}

Volz, Sebastian ^{[1
]}

Nomura, Masahiro ^{[1
,2
]}

机构：

[1] Univ Tokyo, Inst Ind Sci, Tokyo 1538505, Japan

[2] Japan Sci & Technol Agcy, PRESTO, Kawaguchi, Saitama 3320012, Japan

[3] Natl Inst Mat Sci, CFSN, Tsukuba, Ibaraki 3050044, Japan

[4] Natl Inst Mat Sci, Int Ctr Mat Nanoarchitecton WPI MANA, Tsukuba, Ibaraki 3050044, Japan

[5] Natl Inst Mat Sci, Int Ctr Mat Nanoarchitecton, Tsukuba, Ibaraki 3050044, Japan

来源：

ACS APPLIED MATERIALS & INTERFACES | 2019年 / 11卷 / 12期

关键词：

thermoelectrics; phonon engineering silicon; thermal conductivity; figure of merit; THERMAL-CONDUCTIVITY; PHONON TRANSPORT; NANOSTRUCTURES; MODEL;

D O I：

10.1021/acsami.8b21003

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

We propose a simple, low-cost, and large-area method to increase the thermoelectric figure of merit (ZT) in silicon membranes by the deposition of an ultrathin aluminum layer. Transmission electron microscopy showed that short deposition of aluminum on a silicon substrate covers the surface with an ultrathin amorphous film, which, according to recent theoretical works, efficiently destroys phonon wave packets. As a result, we measured 30-40% lower thermal conductivity in silicon membranes covered with aluminum films while the electrical conductivity was not affected. Thus, we have achieved 40-45% higher ZT values in membranes covered with aluminum films. To demonstrate a practical application, we applied this method to enhance the performance of a silicon membrane-based thermoelectric device and measured 42% higher power generation.

引用

页码：12027 / 12031

页数：5

共 37 条

[1] Aluminium nanopillars reduce thermal conductivity of silicon nanobeams [J].