Microwave frequency comb attributed to the formation of dipoles at the surface of a semiconductor by a mode-locked ultrafast laser
被引:10
|
作者:
Hagmann, M. J.
论文数: 0引用数: 0
h-index: 0
机构:
NewPath Res LLC, Salt Lake City, UT 84115 USANewPath Res LLC, Salt Lake City, UT 84115 USA
Hagmann, M. J.
[1
]
Pandey, S.
论文数: 0引用数: 0
h-index: 0
机构:
Univ Utah, Salt Lake City, UT 84112 USANewPath Res LLC, Salt Lake City, UT 84115 USA
Pandey, S.
[2
]
Nahata, A.
论文数: 0引用数: 0
h-index: 0
机构:
Univ Utah, Salt Lake City, UT 84112 USANewPath Res LLC, Salt Lake City, UT 84115 USA
Nahata, A.
[2
]
Taylor, A. J.
论文数: 0引用数: 0
h-index: 0
机构:
Los Alamos Natl Lab, Mat Phys & Applicat Div, Ctr Integrated Nanotechnol, MPA CINT,MS K771, Los Alamos, NM 87545 USANewPath Res LLC, Salt Lake City, UT 84115 USA
Taylor, A. J.
[3
]
Yarotski, D. A.
论文数: 0引用数: 0
h-index: 0
机构:
Los Alamos Natl Lab, Mat Phys & Applicat Div, Ctr Integrated Nanotechnol, MPA CINT,MS K771, Los Alamos, NM 87545 USANewPath Res LLC, Salt Lake City, UT 84115 USA
Yarotski, D. A.
[3
]
机构:
[1] NewPath Res LLC, Salt Lake City, UT 84115 USA
[2] Univ Utah, Salt Lake City, UT 84112 USA
[3] Los Alamos Natl Lab, Mat Phys & Applicat Div, Ctr Integrated Nanotechnol, MPA CINT,MS K771, Los Alamos, NM 87545 USA
The generation of terahertz radiation by focusing a mode-locked ultrafast laser on the surface of a semiconductor was demonstrated by Zhang in 1990, and others have made numerous measurements and analyses of this effect. We have measured the surge current which causes this radiation, showing that this current, and presumably the radiation, are frequency combs with harmonics at integer multiples of the pulse repetition rate of the laser. The harmonics in the current are enhanced by placing the semiconductor in a tunneling junction, where the fundamental is increased by 8 dB with a DC tunneling current of 100 pA. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4768952]
机构:
Univ Utah, Dept Elect & Comp Engn, Salt Lake City, UT 84112 USAUniv Utah, Dept Elect & Comp Engn, Salt Lake City, UT 84112 USA
Hagmann, Mark J.
Stenger, Frank S.
论文数: 0引用数: 0
h-index: 0
机构:
Univ Utah, Sch Comp, Salt Lake City, UT 84112 USAUniv Utah, Dept Elect & Comp Engn, Salt Lake City, UT 84112 USA
Stenger, Frank S.
Yarotski, Dmitry A.
论文数: 0引用数: 0
h-index: 0
机构:
Los Alamos Natl Lab, Mat Phys & Applicat Div, Ctr Integrated Nanotechnol, Los Alamos, NM 87545 USAUniv Utah, Dept Elect & Comp Engn, Salt Lake City, UT 84112 USA
机构:
Columbia Univ, Ctr Integrated Sci & Engn, Solid State Sci & Engn, Opt Nanostruct Lab, New York, NY 10027 USAColumbia Univ, Ctr Integrated Sci & Engn, Solid State Sci & Engn, Opt Nanostruct Lab, New York, NY 10027 USA
Huang, S. -W.
Yang, J.
论文数: 0引用数: 0
h-index: 0
机构:Columbia Univ, Ctr Integrated Sci & Engn, Solid State Sci & Engn, Opt Nanostruct Lab, New York, NY 10027 USA
Yang, J.
McMillan, J. F.
论文数: 0引用数: 0
h-index: 0
机构:Columbia Univ, Ctr Integrated Sci & Engn, Solid State Sci & Engn, Opt Nanostruct Lab, New York, NY 10027 USA
McMillan, J. F.
Wong, C. W.
论文数: 0引用数: 0
h-index: 0
机构:Columbia Univ, Ctr Integrated Sci & Engn, Solid State Sci & Engn, Opt Nanostruct Lab, New York, NY 10027 USA
Wong, C. W.
2014 XXXITH URSI GENERAL ASSEMBLY AND SCIENTIFIC SYMPOSIUM (URSI GASS),
2014,