Charge Noise Spectroscopy Using Coherent Exchange Oscillations in a Singlet-Triplet Qubit

被引:309
作者
Dial, O. E. [1 ]
Shulman, M. D. [1 ]
Harvey, S. P. [1 ]
Bluhm, H. [1 ]
Umansky, V. [2 ]
Yacoby, A. [1 ]
机构
[1] Harvard Univ, Dept Phys, Cambridge, MA 02138 USA
[2] Weizmann Inst Sci, Braun Ctr Submicron Res, Dept Condensed Matter Phys, IL-76100 Rehovot, Israel
基金
美国国家科学基金会;
关键词
ELECTRON SPIN; QUANTUM COMPUTATION;
D O I
10.1103/PhysRevLett.110.146804
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
Two level systems that can be reliably controlled and measured hold promise as qubits both for metrology and for quantum information science. Since a fluctuating environment limits the performance of qubits in both capacities, understanding environmental coupling and dynamics is key to improving qubit performance. We show measurements of the level splitting and dephasing due to the voltage noise of a GaAs singlet-triplet qubit during exchange oscillations. Unexpectedly, the voltage fluctuations are non-Markovian even at high frequencies and exhibit a strong temperature dependence. This finding has impacts beyond singlet-triplet qubits since nearly all solid state qubits suffer from some kind of charge noise. The magnitude of the fluctuations allows the qubit to be used as a charge sensor with a sensitivity of 2 X 10(-8)e/root Hz, 2 orders of magnitude better than a quantum-limited rf single electron transistor. Based on these measurements, we provide recommendations for improving qubit coherence, allowing for higher fidelity operations and improved charge sensitivity. DOI: 10.1103/PhysRevLett.110.146804
引用
收藏
页数:5
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