Sensitive Elements of Vacuum Sensors Based on Porous Nanostructured SiO2-SnO2 Sol-Gel Films

被引：12

作者：

Averin, I. A. ^{[1
]}

Igoshina, S. E. ^{[1
]}

Moshnikov, V. A. ^{[2
]}

Karmanov, A. A. ^{[1
]}

Pronin, I. A. ^{[1
]}

Terukov, E. I. ^{[3
]}

机构：

[1] Penza State Univ, Penza 440026, Russia

[2] St Petersburg State Electrotech Univ LETI, St Petersburg 197376, Russia

[3] Russian Acad Scienes, AF Ioffe Phys Tech Inst, St Petersburg 194021, Russia

来源：

TECHNICAL PHYSICS | 2015年 / 60卷 / 06期

关键词：

SILICON;

D O I：

10.1134/S106378421506002X

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The objects of investigation are porous nanostructured SiO2-SnO2 sol-gel films used as sensitive elements on vacuum sensors. The properties of the films with spherical, labyrinth, and percolation mesh structures are analyzed. It is shown that the resistance of sensitive elements based on these films sharply drops at a pressure below the atmospheric value. Processes taking place in the films at subatmospheric pressures are studied. It is found that the desorption of water vapor increases the resistance of the sensitive elements of vacuum sensors, whereas the desorption of carbon dioxide and oxygen decreases the resistance. This agrees with experimental data.

引用

页码：928 / 932

页数：5

共 32 条

[1]

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[2]

[Anonymous], 2014, RF Patent, Patent No. 2505885

[3]

Averin I. A., 2013, NANOMIKROSIST TEKH, V5, P23

[4]

Averin I. A., 2013, NANOMIKROSIST TEKH, V9, P19