Properties of catalytic CVD SiNx for antireflection coatings

被引：0
|
作者：
Izumi, A [1 ]
Matsumura, H [1 ]
机构：
[1] JAIST, Ishikawa 9231292, Japan
来源：
PROPERTIES AND PROCESSING OF VAPOR-DEPOSITED COATINGS | 1999年 / 555卷
关键词：
D O I：
暂无
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
We propose a novel preparation of high quality silicon nitride (SiNx) films by catalytic chemical vapor deposition (Cat-CVD) method for the application of antireflection coatings. It is found that the refractive index (n) of the Cat-CVD SiNx films are controlled from 2.0 to 2.5 by varying the flow ratio of SiH4 and NH3. The properties of the SiNx (n = 2.0) are investigated, and it is found that, 1) the 16-BHF etching rate of the Cat-CVD SiNx film is only 23 A/min, and the film shows excellent moisture resistance, 2) the Cat-CVD SiNx film shows good insulating properties, and the breakdown electric field is higher than 9 MV/cm and the interface state density is 5.6x10(11)cm(-2)eV(-1), 3) the step coverage of the film is very conformal.
引用
收藏
页码：161 / 166
页数：6
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