Properties of catalytic CVD SiNx for antireflection coatings

被引：0

作者：

Izumi, A ^{[1
]}

Matsumura, H ^{[1
]}

机构：

[1] JAIST, Ishikawa 9231292, Japan

来源：

PROPERTIES AND PROCESSING OF VAPOR-DEPOSITED COATINGS | 1999年 / 555卷

关键词：

D O I：

暂无

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We propose a novel preparation of high quality silicon nitride (SiNx) films by catalytic chemical vapor deposition (Cat-CVD) method for the application of antireflection coatings. It is found that the refractive index (n) of the Cat-CVD SiNx films are controlled from 2.0 to 2.5 by varying the flow ratio of SiH4 and NH3. The properties of the SiNx (n = 2.0) are investigated, and it is found that, 1) the 16-BHF etching rate of the Cat-CVD SiNx film is only 23 A/min, and the film shows excellent moisture resistance, 2) the Cat-CVD SiNx film shows good insulating properties, and the breakdown electric field is higher than 9 MV/cm and the interface state density is 5.6x10(11)cm(-2)eV(-1), 3) the step coverage of the film is very conformal.

引用

页码：161 / 166

页数：6

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