Effect of Annealing on Orientation of Bi3.2Sm0.8Ti3O12 Ferroelectric Film Prepared by Sol-Gel Process

被引：0
作者：
He, Haiyan Y. [1 ]
Huang, Jianfeng F. [1 ]
Cao, Liyun Y. [1 ]
Wu, Jianpeng P. [1 ]
机构：
[1] Shaanxi Univ Sci & Technol, Sch Mat Sci & Engn, Xiangtan, Peoples R China
来源：
RECENT PATENTS ON NANOTECHNOLOGY | 2009年 / 3卷 / 01期
关键词：
Bi3.2Sm0.8Ti3O12; film; Sol-gel process; grain size; microstructure; preannealing; orientation;
D O I：
10.2174/187221009787003267
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
Fatigue-free Bi3.2Sm0.8Ti3O12 ferroelectric thin films were prepared on p-Si(100) substrate using a sol-gel deposition process. The formation and orientation of thin films were studied upon annealing conditions with XRD and SEM. Experiment results indicate that after preannealing at 400 degrees C for 10 min, annealing at 700 degrees C resulted in formation of strong a-axis oriented films. The orientation degree, I-(200)/I-(117), remarkably increases from 1.033 to 1.76 and 6.49 with increasing annealing time from 3 to 10 and 15 min respectively. However, only (117)-oriented films were produced by annealing films at 900 degrees C for 3 min without the preannealing.
引用
收藏
页码：73 / 76
页数：4
相关论文
共 19 条
[1]  
Moazzami R., Hu C., Shepherd W.H., Electrical characteristics of ferroelectric PZT thin film for DRAM application, IEEE Trans Electr Dev, ED-39, (1992)
[2]  
Carrano J., Sudhama C., Chikarmane V., Et al., Electrical and reliability properties of PZT thin film for DRAM application, IEEE Trans Sonics Ultrason, UL-38, (1989)
[3]  
Miller W.D., Chapin L.N., Evans Jr. J.T., (1990)
[4]  
Dat R., Lee J.K., Auciello O., Kingon A., Pulsed laser ablation synthesis and characterization of layered Pt/SrBi<sub>2</sub>Ta<sub>2</sub>O<sub>9</sub>/Pt ferroelectric capacitors with practically no polarization fatigue, Appl Phys Lett, 67, pp. 572-578, (1995)
[5]  
Chon U., Yi G.C., Jang M.H., Fatigue-free behavior of highly oriented Bi<sub>3.25</sub>La<sub>0.75</sub>Ti<sub>3</sub>O<sub>12</sub> thin films grown on Pt/Ti/SiO<sub>2</sub>/Si(100) by metal-organic solution decomposition, Appl Phys Lett, 78, (2001)
[6]  
Adachi Y., Su D., Muralt P., Et al., Ferroelectric and piezoelectric properties of lanthanoid-substituted Bi<sub>4</sub>Ti<sub>3</sub>O<sub>12</sub> thin film grown on (111)Pt and IrO<sub>2</sub> electrodes, Appl Phys Lett, 86, (2005)
[7]  
Yau C.Y., Palan R., Tran K., Et al., Mechanism of polarization enhancement in La-doped Bi<sub>4</sub>Ti<sub>3</sub>O<sub>12</sub> films, Appl Phys Lett, 86, pp. 32907-32909, (2005)
[8]  
Wu D., Xia D.Y., Li D.A., Et al., Electrical properties of chemical-solution derived Bi<sub>3.54</sub>Nd<sub>0.46</sub>Ti<sub>3</sub>O<sub>12</sub> ferroelectric thin films, J Appl Phys, 94, pp. 7376-7378, (2003)
[9]  
Gang A., Barber H.Z., Dawber M., Et al., Lightfoot, orientation dependence of ferroelectric properties of pulsed-laser-ablated Bi<sub>4-x</sub>Nd<sub>x</sub>Ti<sub>3</sub>O<sub>12</sub> films, Appl Phys Lett, 83, pp. 2414-2416, (2003)
[10]  
Kojima T., Sakai T., Watanabe T., Et al., Larger remanent polarization of (Bi,Nd)<sub>4</sub>Ti<sub>3</sub>O<sub>12</sub> Epitaxial thin films grown by metal-organic chemical vapor deposition, Appl Phys Lett, 81, pp. 2746-2748, (2002)
12