Temperature Dependence of Cu2ZnSnS4 Photovoltaic Cell Properties

被引：20

作者：

Tajima, Shin ^{[1
]}

Katagiri, Hironori ^{[2
]}

Jimbo, Kazuo ^{[2
]}

Sugimoto, Noriaki ^{[1
]}

Fukano, Tatsuo ^{[1
]}

机构：

[1] Toyota Cent Res & Dev Labs Inc, Photovolta Lab, Nagakute, Aichi 4801192, Japan

[2] Nagaoka Natl Coll Technol, Dept Elect & Elect Syst Engn, Nagaoka, Niigata 9408532, Japan

来源：

APPLIED PHYSICS EXPRESS | 2012年 / 5卷 / 08期

关键词：

OPTICAL-PROPERTIES;

D O I：

10.1143/APEX.5.082302

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We studied the temperature dependence of current-voltage characteristics of Cu2ZnSnS4 (CZTS) photovoltaic cells to determine their fundamental properties. The open circuit voltage (V-oc) in CZTS cells increased from 0.61 to 0.85 V and showed a linear relationship with decreasing temperature in the range from 150 to 350 K. The V-oc at 0 K was extrapolated to about 1.2 V, which is lower than the bandgap energy of CZTS. These results suggest that the reason for the lower V-oc in CZTS cells is recombination at the interface between the CZTS and buffer layers. (C) 2012 The Japan Society of Applied Physics

引用

页数：3

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