Structural and Optical Characterization of GaN/AlGaN Single Quantum Disk Nanorods

被引：3

作者：

Almokhtar, M. ^{[1
,2
]}

Emura, S. ^{[2
]}

Tambo, H. ^{[2
]}

Hasegawa, S. ^{[2
]}

Asahi, H. ^{[2
]}

机构：

[1] Assiut Univ, Dept Phys, Assiut 71516, Egypt

[2] Osaka Univ, Inst Sci & Ind Res, Ibaraki, Osaka 5670047, Japan

来源：

ACTA PHYSICA POLONICA A | 2013年 / 123卷 / 02期

关键词：

GALLIUM NITRIDE; GAN NANORODS; BLUE; LUMINESCENCE;

D O I：

10.12693/APhysPolA.123.473

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

GaN/AlGaN single quantum disks on GaN nanorods were grown on Si (001) substrate with native SiO2 layer by a plasma-assisted molecular-beam epitaxy under nitrogen-rich conditions. The transmission electron microscopy observations show single GaN nanorods images with an average thickness of 4 nm for the GaN single quantum disk and nanorod diameter of 15 nm. The observed photoluminescence spectra at 8 K show a peak at 3.475 eV, attributed to an exciton recombination in GaN. A strong peak was observed at 3.542 eV. This peak is attributed to the quantum confinement of excitons in the GaN quantum disks. DOI: 10.12693/APhysPolA.123.473

引用

页码：473 / 475

页数：3

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