Rainflow Algorithm-Based Lifetime Estimation of Power Semiconductors in Utility Applications

被引:86
作者
GopiReddy, Lakshmi Reddy [1 ]
Tolbert, Leon M. [1 ,2 ]
Ozpineci, Burak [1 ,2 ]
Pinto, Joao O. P. [3 ]
机构
[1] Univ Tennessee, Dept Elect Engn & Comp Sci, Knoxville, TN 37996 USA
[2] Oak Ridge Natl Lab, Power Elect & Elect Machinery Res Grp PEEMRG, Knoxville, TN 37932 USA
[3] Univ Fed Mato Grosso do Sul, Dept Elect Engn, BR-79070900 Campo Grande, Brazil
基金
美国国家科学基金会;
关键词
Cycle counting; lifetime estimation; power semiconductor reliability; rainflow algorithms; STATCOM; DEVICE RELIABILITY; PREDICTION; TEMPERATURE; MODULES; STATCOM; IGBT;
D O I
10.1109/TIA.2015.2407055
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Rainflow algorithms are one of the popular counting methods used in fatigue and failure analysis in conjunction with semiconductor lifetime estimation models. However, the rain-flow algorithm used in power semiconductor reliability does not consider the time-dependent mean temperature calculation. The equivalent temperature calculation proposed by Nagode et al. is applied to semiconductor lifetime estimation in this paper. A month-long arc furnace load profile is used as a test profile to estimate temperatures in insulated-gate bipolar transistors (IGBTs) in a STATCOM for reactive compensation of load. The degradation in the life of the IGBT power device is predicted based on time-dependent temperature calculation.
引用
收藏
页码:3368 / 3375
页数:8
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