Distinctive zinc oxide (ZnO) nanocrystals were synthesized on the surface of Zn probes using a counter-flow flame medium formed by methane/acetylene and oxygen-enriched air streams. The source material, a zinc wire with a purity of similar to 99.99% and diameter of 1 mm, was introduced through a sleeve into the oxygen rich region of the flame. The position of the probe/sleeve was varied within the flame medium resulting in growth variation of ZnO nanocrystals on the surface of the probe. The shape and structural parameters of the grown crystals strongly depend on the flame position. Structural variations of the synthesized crystals include single-crystalline ZnO nanorods and microprisms (ZMPs) (the ZMPs have less than a few micrometers in length and several hundred nanometers in cross section) with a large number of facets and complex axial symmetry with a nanorod protruding from their tips. The protruding rods are less than 100 nm in diameter and lengths are less than 1 mu m. The protruding nanorods can be elongated several times by increasing the residence time of the probe/sleeve inside the oxygen-rich flame or by varying the flame position. At different flame heights, nanorods having higher length-to-diameter aspect-ratio can be synthesized. A lattice spacing of similar to 0.26 nm was measured for the synthesized nanorods, which can be closely correlated with the (0 0 2) interplanar spacing of hexagonal ZnO (Wurtzite) cells. The synthesized nanostructures were analyzed by scanning electron microscopy (SEM), transmission electron microscopy (TEM), high resolution TEM (HR-TEM), X-ray energy dispersive spectroscopy (EDS), and selected area electron diffraction pattern (SAED). The growth mechanism of the ZnO nanostructures is discussed. (C) 2012 Elsevier B.V. All rights reserved.
机构:
Indian Inst Technol, Dept Met & Mat Engn, Roorkee 247667, Uttarakhand, IndiaIndian Inst Technol, Dept Met & Mat Engn, Roorkee 247667, Uttarakhand, India
机构:
Chinese Acad Sci, Inst Semicond, Lab Semicond Mat Sci, Beijing 100083, Peoples R ChinaChinese Acad Sci, Inst Semicond, Lab Semicond Mat Sci, Beijing 100083, Peoples R China
Liu, SM
Liu, FQ
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机构:Chinese Acad Sci, Inst Semicond, Lab Semicond Mat Sci, Beijing 100083, Peoples R China
Liu, FQ
Guo, HQ
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机构:Chinese Acad Sci, Inst Semicond, Lab Semicond Mat Sci, Beijing 100083, Peoples R China
Guo, HQ
Zhang, ZH
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机构:Chinese Acad Sci, Inst Semicond, Lab Semicond Mat Sci, Beijing 100083, Peoples R China
Zhang, ZH
Wang, ZG
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机构:Chinese Acad Sci, Inst Semicond, Lab Semicond Mat Sci, Beijing 100083, Peoples R China
机构:
Jilin Univ, State Key Lab Superhard Mat, Changchun 130012, Peoples R China
Jilin Univ, Coll Mat Sci & Engn, Changchun 130012, Peoples R ChinaJilin Univ, State Key Lab Superhard Mat, Changchun 130012, Peoples R China
Zhao Li-Yan
Ning Jia-Jia
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Jilin Univ, State Key Lab Superhard Mat, Changchun 130012, Peoples R China
Jilin Univ, Coll Mat Sci & Engn, Changchun 130012, Peoples R ChinaJilin Univ, State Key Lab Superhard Mat, Changchun 130012, Peoples R China
Ning Jia-Jia
Lin Ao-Lei
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Jilin Univ, State Key Lab Superhard Mat, Changchun 130012, Peoples R China
Jilin Univ, Inst Adv Technol, Changchun 130012, Peoples R ChinaJilin Univ, State Key Lab Superhard Mat, Changchun 130012, Peoples R China
Lin Ao-Lei
Li Dong-Mei
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Jilin Univ, State Key Lab Superhard Mat, Changchun 130012, Peoples R ChinaJilin Univ, State Key Lab Superhard Mat, Changchun 130012, Peoples R China
Li Dong-Mei
CHEMICAL JOURNAL OF CHINESE UNIVERSITIES-CHINESE,
2010,
31
(12):
: 2349
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2353