Wetting layer evolution and its temperature dependence during self-assembly of InAs/GaAs quantum dots

被引：45

作者：

Zhang, Hongyi ^{[1
]}

Chen, Yonghai ^{[1
]}

Zhou, Guanyu ^{[1
]}

Tang, Chenguang ^{[1
]}

Wang, Zhanguo ^{[1
]}

机构：

[1] Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China

来源：

NANOSCALE RESEARCH LETTERS | 2012年 / 7卷

基金：

中国国家自然科学基金;

关键词：

Quantum dots; Stranski-Krastanov growth mode; Wetting layer; Desorption; Growth kinetics; REFLECTANCE DIFFERENCE SPECTROSCOPY; INAS; DESORPTION; GROWTH; GAAS; EPITAXY; LASERS; SYSTEM;

D O I：

10.1186/1556-276X-7-600

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

For InAs/GaAs(001) quantum dot (QD) system, the wetting layer (WL) evolution and its temperature dependence were studied using reflectance difference spectroscopy and were analyzed with a rate equation model. WL thicknesses showed a monotonic increase at relatively low growth temperatures but showed an initial increase and then decrease at higher temperatures, which were unexpected from a thermodynamic understanding. By adopting a rate equation model, the temperature dependence of QD formation rate was assigned as the origin of different WL evolutions. A brief discussion on the indium desorption was given. Those results gave hints of the kinetic aspects of QD self-assembly.

引用

页数：6

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