Wetting layer evolution and its temperature dependence during self-assembly of InAs/GaAs quantum dots

被引：45
|
作者：
Zhang, Hongyi [1 ]
Chen, Yonghai [1 ]
Zhou, Guanyu [1 ]
Tang, Chenguang [1 ]
Wang, Zhanguo [1 ]
机构：
[1] Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China
来源：
NANOSCALE RESEARCH LETTERS | 2012年 / 7卷
基金：
中国国家自然科学基金;
关键词：
Quantum dots; Stranski-Krastanov growth mode; Wetting layer; Desorption; Growth kinetics; REFLECTANCE DIFFERENCE SPECTROSCOPY; INAS; DESORPTION; GROWTH; GAAS; EPITAXY; LASERS; SYSTEM;
D O I：
10.1186/1556-276X-7-600
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
For InAs/GaAs(001) quantum dot (QD) system, the wetting layer (WL) evolution and its temperature dependence were studied using reflectance difference spectroscopy and were analyzed with a rate equation model. WL thicknesses showed a monotonic increase at relatively low growth temperatures but showed an initial increase and then decrease at higher temperatures, which were unexpected from a thermodynamic understanding. By adopting a rate equation model, the temperature dependence of QD formation rate was assigned as the origin of different WL evolutions. A brief discussion on the indium desorption was given. Those results gave hints of the kinetic aspects of QD self-assembly.
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页数：6
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