The dynamics of quantum dot formation in the InAs on GaAs(001) system: growth rate effects

被引：6
作者：
Westwood, DI [1 ]
Sobiesierski, Z [1 ]
Matthai, CC [1 ]
机构：
[1] Univ Wales Coll Cardiff, Dept Phys & Astron, Cardiff CF2 3YB, S Glam, Wales
来源：
APPLIED SURFACE SCIENCE | 1999年 / 144-45卷
基金：
英国工程与自然科学研究理事会;
关键词：
quantum dots; semiconductor; reflectance anisotropy spectroscopy (RAS); epitaxy; islands;
D O I：
10.1016/S0169-4332(98)00845-9
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
Reflectance anisotropy spectroscopy (RAS) has been used to monitor the formation and development of InAs islands grown onto GaAs(001) substrates in real time. This is possible because the signal at a photon energy of 4.0 eV is mainly sensitive to the thickness of the continuous inter-island wetting layer in the thickness range of interest. This makes it possible, for the first time, to follow the partition of material between the wetting layer and islands. Monitoring the deposition of 2 monolayers of material at a fixed growth temperature of 475 degrees C reveals important details of the growth process, such as the fact that the fraction of the incident flux incorporated immediately into the islands is largely insensitive to growth rate. (C) 1999 Elsevier Science B.V. All rights reserved.
引用
收藏
页码：484 / 487
页数：4
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