Non-Abelian Gauge Potentials in Graphene Bilayers

被引:202
作者
San-Jose, P. [1 ]
Gonzalez, J. [1 ]
Guinea, F. [2 ]
机构
[1] CSIC, IEM, Madrid 28006, Spain
[2] CSIC, ICMM, E-28049 Madrid, Spain
基金
美国国家科学基金会;
关键词
QUANTUM; PHASE;
D O I
10.1103/PhysRevLett.108.216802
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
We study the effect of spatial modulations in the interlayer hopping of graphene bilayers, such as those that arise upon shearing or twisting. We show that their single-particle physics, characterized by charge accumulation and recurrent formation of zero-energy bands as the pattern period L increases, is governed by a non-Abelian gauge potential arising in the low-energy electronic theory due to the coupling between layers. We show that such gauge-type couplings give rise to a potential that, for certain discrete values of L, spatially confines states at zero energy in particular regions of the moire patterns. We also draw the connection between the recurrence of the flat zero-energy bands and the non-Abelian character of the potential.
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收藏
页数:5
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