Low-κ organic layer as a top gate dielectric for graphene field effect transistors

被引：15

作者：

Mordi, G. ^{[1
]}

Jandhyala, S. ^{[2
]}

Floresca, C. ^{[1
]}

McDonnell, S. ^{[2
]}

Kim, M. J. ^{[2
]}

Wallace, R. M. ^{[2
]}

Colombo, L. ^{[3
]}

Kim, J. ^{[1
,2
]}

机构：

[1] Univ Texas Dallas, Dept Elect Engn, Richardson, TX 75080 USA

[2] Univ Texas Dallas, Dept Mat Sci & Engn, Richardson, TX 75080 USA

[3] Texas Instruments Inc, Dallas, TX 75243 USA

来源：

APPLIED PHYSICS LETTERS | 2012年 / 100卷 / 19期

关键词：

DEPOSITION;

D O I：

10.1063/1.4711776

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We demonstrate the characteristics of dual gated graphene field effect transistors using a thin layer (similar to 7 nm) of parylene-C as a top-gate dielectric. Our devices exhibit good dielectric properties with minimal doping, low leakage current (similar to 10(-6) A/cm(2) at +/- 2 V), and a dielectric constant of similar to 2.1. Additionally, Raman spectroscopy did not reveal any process induced defects after dielectric deposition. Electrical characterization performed in air showed a carrier mobility of similar to 5050 cm(2)/Vs with hysteresis less than 30 mV during top gate operation (-2.5V to 2.5 V) which indicates that parylene and its interface with graphene does not have a significant amount of trapped charges. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4711776]

引用

页数：3

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