Sealed ultra low-k organosilica films with improved electrical, mechanical and chemical properties

In this contribution, we present sealed ultra low-k organosilica films that have improved electrical, mechanical and chemical properties. The films consist of a mesoporous ethylene-bridged organosilica layer at the bottom and an almost non-porous cyclic carbon-bridged top layer. This top layer effectively seals metal penetration during atomic layer deposition processes. Furthermore, by applying this sealing approach we can lower the dielectric constant of the pristine mesoporous film from 2.5 to 2.07 while we can also lower the leakage current and improve the mechanical and chemical stability.