Sealed ultra low-k organosilica films with improved electrical, mechanical and chemical properties

被引：7

作者：

Goethals, Frederik ^{[1
]}

Levrau, Elisabeth ^{[2
]}

Pollefeyt, Glenn ^{[1
]}

Baklanov, Mikhail R. ^{[3
]}

Ciofi, Ivan ^{[3
]}

Vanstreels, Kris ^{[3
]}

Detavernier, Christophe ^{[2
]}

Van Driessche, Isabel ^{[1
]}

Van der Voort, Pascal ^{[1
]}

机构：

[1] Univ Ghent, Dept Inorgan & Phys Chem, B-9000 Ghent, Belgium

[2] Univ Ghent, Dept Solid State Sci, B-9000 Ghent, Belgium

[3] IMEC, B-3001 Heverlee, Belgium

来源：

JOURNAL OF MATERIALS CHEMISTRY C | 2013年 / 1卷 / 25期

关键词：

ATOMIC LAYER DEPOSITION; DIELECTRIC-CONSTANT MATERIALS; ELLIPSOMETRIC POROSIMETRY; BARRIER LAYER; SILICA; INTERCONNECTS; INTEGRATION; CHALLENGES; RESISTANCE; IMPACT;

D O I：

10.1039/c3tc30522h

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

In this contribution, we present sealed ultra low-k organosilica films that have improved electrical, mechanical and chemical properties. The films consist of a mesoporous ethylene-bridged organosilica layer at the bottom and an almost non-porous cyclic carbon-bridged top layer. This top layer effectively seals metal penetration during atomic layer deposition processes. Furthermore, by applying this sealing approach we can lower the dielectric constant of the pristine mesoporous film from 2.5 to 2.07 while we can also lower the leakage current and improve the mechanical and chemical stability.

引用

页码：3961 / 3966

页数：6

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