Single mode laser based on lnAsSb/InAsSbP double heterostructure with tuning from 3.224 to 3.234 μm

被引:1
|
作者
Astakhova, AP
Imenkov, AN
Kolchanova, NM
Yakovlev, YP
Kubát, P
Civis, S
Walters, A
机构
[1] AF Ioffe Phys Tech Inst, St Petersburg 194021, Russia
[2] Acad Sci Czech Republ, Inst Phys Chem, CR-18223 Prague 8, Czech Republic
[3] Univ Sci & Technol Lille, Lab Phys Lasers Atomes & Mol, Ctr Etud & Rech Lasers & Applicat, F-59655 Villeneuve Dascq, France
来源
IEE PROCEEDINGS-OPTOELECTRONICS | 2002年 / 149卷 / 01期
关键词
D O I
10.1049/ip-opt:20020170
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
A new type of semiconductor laser based on an InAsSb/InAsSbP double heterostructure and having just a single tuned spectral I line is described for spectroscopy of atmospherically important molecules in the 3100 cm(-1) region. The lasers are tested using a closed-cycle He-cryostat in the temperature range 12-100 K. The optimal characteristics of the lasers are found to be a temperature range of 17-80 K and a drive current range of 50-400 mA. Under these conditions, the laser emission can be tuned in a single-mode regime over a range greater than 10 cm(-1). Experiments are performed to measure the rovibrational absorption spectra of CH3Cl, NH3, OCS and H2O, which prove the generation to be the single-mode one. The estimated spectral emission line-widths vary from 7 to 30 MHz depending on current and from laser to laser.
引用
收藏
页码:27 / 31
页数:5
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