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- [4] InGaAsSb(Gd)/InAsSbP double heterostructure lasers (λ=3.0–3.3 µm) for diode laser spectroscopy Semiconductors, 2000, 34 : 848 - 852
- [9] Single-mode InAsSb/InAsSbP laser (λ≈3.2 μm) Tunable over 100 Å Semiconductors, 2000, 34 : 237 - 242
- [10] On-Chip ATR Sensor (λ = 3.4 μm) Based on InAsSbP/InAs Double Heterostructure for the Determination of Ethanol Concentration in Aqueous Solutions Optics and Spectroscopy, 2023, 131 : 31 - 37