Understanding of interface structures and reaction mechanisms induced by Ge or GeO diffusion in Al2O3/Ge structure

被引：11

作者：

Shibayama, Shigehisa ^{[1
,2
]}

Kato, Kimihiko ^{[1
]}

Sakashita, Mitsuo ^{[1
]}

Takeuchi, Wakana ^{[1
]}

Taoka, Noriyuki ^{[1
]}

Nakatsuka, Osamu ^{[1
]}

Zaima, Shigeaki ^{[1
]}

机构：

[1] Nagoya Univ, Grad Sch Engn, Dept Crystalline Mat Sci, Chikusa Ku, Nagoya, Aichi 4648603, Japan

[2] JSPS, Chiyoda Ku, Tokyo 1020083, Japan

来源：

APPLIED PHYSICS LETTERS | 2013年 / 103卷 / 08期

关键词：

OXIDATION; GERMANIUM; SYSTEM;

D O I：

10.1063/1.4819127

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The reaction mechanisms at Al2O3/Ge interfaces with thermal oxidation through the Al2O3 layer have been investigated. X-ray photoelectron spectroscopy reveals that an Al6Ge2O13 layer is formed near the interface, and a GeO2 layer is formed on the Al2O3 surface, suggesting Ge or GeO diffusion from the Ge surface. It is also clarified that the Al6Ge2O13 layer is formed by the different mechanism with a small activation energy of 0.2 eV, compared with the GeO2 formation limited by oxygen diffusion. Formation of Al-O-Ge bonds due to the AlGeO formation could lead appropriate interface structures with high interface qualities. (C) 2013 AIP Publishing LLC.

引用

页数：4

共 17 条

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