The Effect of Oxygen Partial Pressure and Annealing Process on the Characteristics of ZnGa2O4 MSM UV Photodetector

被引：26

作者：

Huang, Wei-Lun ^{[1
,2
]}

Li, Cheng-Hsun ^{[1
,2
]}

Chang, Sheng-Po ^{[1
,2
]}

Chang, Shoou-Jinn ^{[1
,2
]}

机构：

[1] Natl Cheng Kung Univ, Adv Optoelect Technol Ctr, Inst Microelect, Ctr Micro Nano Sci & Technol, Tainan 701, Taiwan

[2] Natl Cheng Kung Univ, Adv Optoelect Technol Ctr, Dept Elect Engn, Ctr Micro Nano Sci & Technol, Tainan 701, Taiwan

来源：

ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY | 2019年 / 8卷 / 07期

关键词：

OXIDE; FILMS;

D O I：

10.1149/2.0371907jss

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

In this work, ZnGa2O4 solar-blind photodetectors (PD) based on a metal-semiconductor-metal (MSM) structure was fabricated by radio frequency (RF) magnetron sputtering method. The transmittance of the material shows larger than 80% cross the visible light region. As a wide bandgap and high transparency semiconducting material, ZGO is a potential candidate for UV-detection applications. The ZGO MSM PD with no oxygen flow during sputtering exhibits a responsivity of 4.46 x 10(-2) A/W under illumination at wavelength of 260 nm, rejection ratio of 1.75 x 10(4). The performance can be enhanced with proper thermal annealing process. With an annealing process at temperature of 200 degrees C, the responsivity and rejection ratio are 0.203 A/W and 1.12 x 10(5), respectively. (C) The Author(s) 2019. Published by ECS.

引用

页码：Q3213 / Q3216

页数：4

共 17 条

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