Layer-by-layer growth of CdSe-based nanocrystal light-emitting diodes

被引:23
|
作者
Lee, J
Mathai, M
Jain, F
Papadimitrakopoulos, F [1 ]
机构
[1] Univ Connecticut, Nanomat Optoelect Lab, Storrs, CT 06269 USA
[2] Univ Connecticut, Dept Elect & Comp Engn, Storrs, CT 06269 USA
[3] Univ Connecticut, Inst Mat Sci, Polymer Program, Dept Chem, Storrs, CT 06269 USA
关键词
CdSe nanocrystals; light-emitting diodes; layer-by-layer assembly; photoluminescence; electroluminescence;
D O I
10.1166/jnn.2001.009
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
The partial exchange of surface-passivating trioctylphosphine oxide (TOPO) on CdSe and ZnS-clad CdSe (CdSe/ZnS) nanocrystals with primary amines was utilized to grow ultra-thin films of these nanocrystals under nonaqueous conditions, This growth was achieved using 1,12-diaminododecane in a layer-by-layer assembly format, where one of the amino groups binds with the nanocrystal surface and the other regenerates the interface for further binding of nanocrystals. The nature of the growth is dependent on the relative surface affinity between the TOPO and the primary amine toward the zinc or cadmium sites on the nanocrystals. Using this technique, high-quality luminescent films of these nanocrystals can be built with well-defined thicknesses. Electroluminescent devices have been fabricated using this methodology.
引用
收藏
页码:59 / 64
页数:6
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