Mesoporous germanium morphology transformation for lift-off process and substrate re-use

被引：41

作者：

Boucherif, Abderraouf ^{[1
]}

Beaudin, Guillaume ^{[1
]}

Aimez, Vincent ^{[1
]}

Ares, Richard ^{[1
]}

机构：

[1] Univ Sherbrooke, Inst Interdisciplinaire Innovat Technol 3IT, Sherbrooke, PQ J1K 2R1, Canada

来源：

APPLIED PHYSICS LETTERS | 2013年 / 102卷 / 01期

关键词：

MONOCRYSTALLINE POROUS SILICON; SOLAR-CELL; LAYER;

D O I：

10.1063/1.4775357

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The morphology of electrochemically formed mesoporous Ge double-layer and its transformations during ultra-high-vacuum annealing at 600-700 degrees C are investigated by scanning electron microscopy. It was found that the transformation occurs via mass transport at constant volume. The process transforms the pores into faceted spherical voids. These findings determine the optimal conditions for the transformation of the mesoporous Ge into a useful structure, which consists of a 1.8 mu m thick monocrystalline Ge film with buried lateral cavities allowing for subsequent lift-off. The monocrystalline nature of the film and its suitability as a seed layer for GaAs epitaxy are demonstrated by X-ray diffraction. (C) 2013 American Institute of Physics. [http://dx.doi.org/10.1063/1.4775357]

引用

页数：5

共 33 条

[1] Effect of growth parameters on the MOVPE of GaAs/Ge for solar cell applications [J].