Deep defect states in a-Si:(H,C) alloys

被引：0

作者：

Lin, SY

机构：

[1] Department of Electrical Engineering, National Tsing Hua University, Hsinchu

来源：

MATERIALS CHEMISTRY AND PHYSICS | 1996年 / 43卷 / 01期

关键词：

cluster-Bethe-lattice; tight binding; density of states; defect states; dangling bonds; SILICON-CARBON ALLOYS; AMORPHOUS-SILICON; SPECTRA; SI;

D O I：

10.1016/0254-0584(95)01597-N

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The cluster-Bethe-lattice method is used to study the electronic properties of the a-Si:(H,C) alloys. The sp(3)s* tight-binding-parameters are used in the calculations. The electronic local density of states for several clusters containing various local bonding configurations are calculated. There are no defect states in the gap induced by the ideal bonding of H and C in the cluster whereas there are defect states in the gap due to the Si- and C- dangling bonds. The energy level for the neutral Si dangling bond is at +0.4 eV. For the cluster containing a Si-C bond, we found that the defect energy level associated with the C dangling bond lies at -0.8 eV, and that associated with the Si dangling bond lies at +0.8 eV. The defect states distribution in the gap is wider with the inclusion of C in a-Si:H films.

引用

页码：19 / 24

页数：6

共 16 条

[1]

ALLAN DC, 1984, PHYSICS HYDROGENATED, V2, P5

[2] ELECTRONIC AND OPTICAL-PROPERTIES OF A-SI1-XCX FILMS PREPARED FROM A H2-DILUTED MIXTURE OF SIH4 AND CH4 [J].

BAKER, SH ;

SPEAR, WE ;

GIBSON, RAG .

PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1990, 62 (02) :213-223

[3] PHYSICS OF AMORPHOUS-SILICON CARBON ALLOYS [J].

BULLOT, J ;

SCHMIDT, MP .

PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 1987, 143 (02) :345-418

[4] INFRARED VIBRATIONAL-SPECTRA OF HYDROGENATED AMORPHOUS AND MICROCRYSTALLINE SILICON-CARBON ALLOYS - A COMPARISON OF THEIR STRUCTURE [J].

DEMICHELIS, F ;

CROVINI, G ;

PIRRI, CF ;

TRESSO, E .

PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1993, 68 (03) :329-340

[5] THEORY OF FLUCTUATIONS AND LOCALIZED STATES IN AMORPHOUS TETRAHEDRALLY BONDED SOLIDS [J].

JOANNOPOULOS, JD .

PHYSICAL REVIEW B, 1977, 16 (06) :2764-2774

[6]

KATAYAMA Y, 1983, J NONCRYST SOLIDS, V56, P561

[7]

LEO G, 1993, J NONCRYST SOLIDS, V164, P1035

[8] X-RAY PHOTOEMISSION SPECTRA OF CRYSTALLINE AND AMORPHOUS SI AND GE VALENCE BANDS [J].

LEY, L ;

SHIRLEY, DA ;

POLLAK, R ;

KOWALCZYK, S .

PHYSICAL REVIEW LETTERS, 1972, 29 (16) :1088-+

[9] A STUDY OF THE ELECTRONIC-PROPERTIES OF THE GAAS (110) SURFACE BY USING THE CLUSTER-BETHE-LATTICE METHOD [J].

LIN, SY .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1989, 28 (10) :1756-1761

[10] IDENTIFICATION OF INFRARED-ABSORPTION PEAKS OF AMORPHOUS SILICON-CARBON ALLOY BY THERMAL ANNEALING [J].

LIN, WL ;

TSAI, HK ;

LEE, SC ;

SAH, WJ ;

TZENG, WJ .

APPLIED PHYSICS LETTERS, 1987, 51 (25) :2112-2114

← 1 2 →