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Geometric and Electronic Structure of Templated C60 on Diindenoperylene Thin Films
被引:43
作者:

Hinderhofer, A.
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Univ Tubingen, Inst Appl Phys, D-72076 Tubingen, Germany
Chiba Univ, Grad Sch Adv Integrat Sci, Inage Ku, Chiba 2638522, Japan Univ Tubingen, Inst Appl Phys, D-72076 Tubingen, Germany

Gerlach, A.
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Univ Tubingen, Inst Appl Phys, D-72076 Tubingen, Germany Univ Tubingen, Inst Appl Phys, D-72076 Tubingen, Germany

Broch, K.
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Univ Tubingen, Inst Appl Phys, D-72076 Tubingen, Germany Univ Tubingen, Inst Appl Phys, D-72076 Tubingen, Germany

Hosokai, T.
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机构:
Iwate Univ, Dept Mat & Sci, Morioka, Iwate 0208551, Japan Univ Tubingen, Inst Appl Phys, D-72076 Tubingen, Germany

Yonezawa, K.
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Chiba Univ, Grad Sch Adv Integrat Sci, Inage Ku, Chiba 2638522, Japan Univ Tubingen, Inst Appl Phys, D-72076 Tubingen, Germany

Kato, K.
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Chiba Univ, Grad Sch Adv Integrat Sci, Inage Ku, Chiba 2638522, Japan Univ Tubingen, Inst Appl Phys, D-72076 Tubingen, Germany

Kera, S.
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Chiba Univ, Grad Sch Adv Integrat Sci, Inage Ku, Chiba 2638522, Japan Univ Tubingen, Inst Appl Phys, D-72076 Tubingen, Germany

Ueno, N.
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h-index: 0
机构:
Chiba Univ, Grad Sch Adv Integrat Sci, Inage Ku, Chiba 2638522, Japan Univ Tubingen, Inst Appl Phys, D-72076 Tubingen, Germany

Schreiber, F.
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h-index: 0
机构:
Univ Tubingen, Inst Appl Phys, D-72076 Tubingen, Germany Univ Tubingen, Inst Appl Phys, D-72076 Tubingen, Germany
机构:
[1] Univ Tubingen, Inst Appl Phys, D-72076 Tubingen, Germany
[2] Chiba Univ, Grad Sch Adv Integrat Sci, Inage Ku, Chiba 2638522, Japan
[3] Iwate Univ, Dept Mat & Sci, Morioka, Iwate 0208551, Japan
关键词:
MOLECULAR-BEAM DEPOSITION;
ENERGY-LEVEL ALIGNMENT;
OPEN-CIRCUIT VOLTAGE;
GROWTH;
INTERFACE;
SUBSTRATE;
SURFACE;
PERFLUOROPENTACENE;
SPECTROSCOPY;
ORIENTATION;
D O I:
10.1021/jp3106056
中图分类号:
O64 [物理化学(理论化学)、化学物理学];
学科分类号:
070304 ;
081704 ;
摘要:
The structural order of C-60 thin films is shown to be significantly improved by inserting a templating layer of diindenoperylene (DIP) between the SiO2 substrate and C-60. In contrast to growth on an amorphous substrate like SiO2, C-60 grown on DIP exhibits alignment of fcc-domains with the (111) plane parallel to the substrate and a significant increase of the coherent in-plane island size by a factor of similar to 4. Modification of the structural quality of the DIP bottom layer leads to a change in structural order in the C-60 top layer. In addition, ultraviolet photoelectron spectroscopy data from templated and nontemplated C-60 films are discussed. In contrast to other anisotropic organic molecules, for C-60 the spectral broadening and density of states of the highest occupied molecular orbital region do not depend significantly on the structural order in the C-60 film, which can be rationalized by the isotropic shape of the C-60 molecule.
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页码:1053 / 1058
页数:6
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