ZnO thin films prepared by ion beam enhanced deposition method

被引：0
|
作者：
Yuan, NY [1 ]
Li, JH [1 ]
Fan, LN [1 ]
Wang, XQ [1 ]
Zhou, Y [1 ]
机构：
[1] Jiangsu Polytech Univ, Funct Mat Lab, Changzhou 213016, Peoples R China
来源：
2ND INTERNATIONAL CONFERENCE ON ADVANCED OPTICAL MANUFACTURING AND TESTING TECHNOLOGIES: ADVANCED OPTICAL MANUFACTURING TECHNOLOGIES | 2006年 / 6149卷
关键词：
ZnO films; ion beam enhanced deposition; In-N co-doped; Al-N co-doped;
D O I：
10.1117/12.674297
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Ion beam enhanced deposition method was adopted to prepare In-N co-doped and Al-N co-doped ZnO films on Si, SiO2 and glass substrates. ZnO mixed with In2O3 or Al2O3 powder sputtering target was used and during the deposition N+/Ar+ mixed beam with an energy of 40KeV and a beam current of 2mA implanted into the deposited films. The XRD results showed that all polycrystalline In-N and Al-N co-doped ZnO films deposited on Si, SiO2 and glass substrates have a preferred (002) orientation. The as-deposited In-N co-doped ZnO film showed p-type and had a resistivity of 2.4 Omega cm on SiO2 substrate. After annealed in N-2, the lowest resistivity of p type In-N co-doped ZnO films was 0.8 Omega cm. While Al-N co-doped ZnO film showed n type.
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页数：5
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