ZnO thin films prepared by ion beam enhanced deposition method

Ion beam enhanced deposition method was adopted to prepare In-N co-doped and Al-N co-doped ZnO films on Si, SiO2 and glass substrates. ZnO mixed with In2O3 or Al2O3 powder sputtering target was used and during the deposition N+/Ar+ mixed beam with an energy of 40KeV and a beam current of 2mA implanted into the deposited films. The XRD results showed that all polycrystalline In-N and Al-N co-doped ZnO films deposited on Si, SiO2 and glass substrates have a preferred (002) orientation. The as-deposited In-N co-doped ZnO film showed p-type and had a resistivity of 2.4 Omega cm on SiO2 substrate. After annealed in N-2, the lowest resistivity of p type In-N co-doped ZnO films was 0.8 Omega cm. While Al-N co-doped ZnO film showed n type.