Epitaxy and properties of InMnAs/AlGaSb diluted magnetic III-V semiconductor heterostructures

被引：18

作者：

Shen, A

Matsukura, F

Sugawara, Y

Kuroiwa, T

Ohno, H

Oiwa, A

Endo, A

Katsumoto, S

Iye, Y

机构：

[1] JRDC, TOKYO, JAPAN

[2] UNIV TOKYO, INST SOLID STATE PHYS, TOKYO 106, JAPAN

[3] CHINESE ACAD SCI, SHANGHAI INST OPT & FINE MECH, SHANGHAI 201800, PEOPLES R CHINA

来源：

APPLIED SURFACE SCIENCE | 1997年 / 113卷

基金：

日本学术振兴会;

关键词：

molecular-beam epitaxy; III-V compounds; diluted magnetic semiconductors; magnetic anisotropy; ferromagnetic order; superparamagnetism;

D O I：

10.1016/S0169-4332(96)00865-3

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

InMnAs/AlGaSb diluted magnetic semiconductor heterostructures have been grown by molecular-beam epitaxy on GaAs substrates. Three epitaxial procedures were employed for the growth of InMnAs, which resulted in three-dimensional or two-dimensional nucleation. Low-temperature magnetotransport measurements reveal that while some of the samples show well-aligned ferromagnetic ordering some others show ferromagnetic behavior with no magnetic anisotropy or, in the extreme case, superparamagnetic behavior. The transport properties were correlated to the growth modes.

引用

页码：183 / 188

页数：6

共 6 条

[1]

FURDYNA JK, 1988, SEMICONDUCTOR SEMIME, V25

[2] DILUTED MAGNETIC III-V SEMICONDUCTORS [J].