Transport mechanism of interfacial network forming atoms during silicon oxidation

被引：16

作者：

Kageshima, H

Uematsu, M

Akagi, K

Tsuneyuki, S

Akiyama, T

Shiraishi, K

机构：

[1] Nippon Telegraph & Tel Corp, Basic Res Labs, Atsugi, Kanagawa 2430198, Japan

[2] Univ Tokyo, Grad Sch Sci, Tokyo 1130033, Japan

[3] Mie Univ, Dept Engn Phys, Tsu, Mie 5148507, Japan

[4] Univ Tsukuba, Grad Sch Pure & Appl Sci, Tsukuba, Ibaraki 3058571, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS | 2006年 / 45卷 / 2A期

关键词：

Si; Si oxide; interface; oxidation; defects; transformation; first-principles calculation;

D O I：

10.1143/JJAP.45.694

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A first-principles study on the energetics of the structural transformation a, the interface, revealed that oxygen vacancies can accompany the high density oxide regions formed during the silicon oxidation. The vacancies can also promote the effective out-migration of these regions, which allows the easier oxide viscous flow to release the interfacial strain. Compared with this mechanism, self-interstitials are rarely formed in the silicon substrate. These results also suggest defect formation mechanisms around the interfaces.

引用

页码：694 / 699

页数：6

共 59 条

[1] Theoretical investigation of oxygen diffusion in compressively strained high-density α-quartz [J].

Akiyama, T ;

Kageshima, H ;

Uematsu, M ;

Ito, T .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2005, 44 (10) :7427-7429

[2] Vanishing atomic migration barrier in SiO2 [J].

Aziz, MJ ;

Circone, S ;

Agee, CB .

NATURE, 1997, 390 (6660) :596-599

[3] Reactions and diffusion of water and oxygen molecules in amorphous SiO2 -: art. no. 055508 [J].

Bakos, T ;

Rashkeev, SN ;

Pantelides, ST .

PHYSICAL REVIEW LETTERS, 2002, 88 (05) :4

[4] Bonding arrangements at the Si-SiO2 and SiC-SiO2 interfaces and a possible origin of their contrasting properties [J].

Buczko, R ;

Pennycook, SJ ;

Pantelides, ST .

PHYSICAL REVIEW LETTERS, 2000, 84 (05) :943-946

[5] CATALYTIC EFFECT OF SIO ON THERMOMIGRATION OF IMPURITIES IN SIO2 [J].

CELLER, GK ;

TRIMBLE, LE .

APPLIED PHYSICS LETTERS, 1989, 54 (15) :1427-1429

[6] GENERAL RELATIONSHIP FOR THERMAL OXIDATION OF SILICON [J].

DEAL, BE ;

GROVE, AS .

JOURNAL OF APPLIED PHYSICS, 1965, 36 (12) :3770-&

[7] Growth study and theoretical investigation of the ultrathin oxide SiO2-Si heterojunction [J].

Demkov, AA ;

Sankey, OF .

PHYSICAL REVIEW LETTERS, 1999, 83 (10) :2038-2041

[8] Structural nature of the Si/SiO2 interface through infrared spectroscopy [J].

Devine, RAB .

APPLIED PHYSICS LETTERS, 1996, 68 (22) :3108-3110

[9] Non-Arrhenius temperature dependence of reliability in ultrathin silicon dioxide films [J].

DiMaria, DJ ;

Stathis, JH .

APPLIED PHYSICS LETTERS, 1999, 74 (12) :1752-1754

[10] Structural analysis of the SiO2/Si(100) interface by means of photoelectron diffraction -: art. no. 126101 [J].

Dreiner, S ;

Schürmann, M ;

Westphal, C .

PHYSICAL REVIEW LETTERS, 2004, 93 (12) :126101-1

← 1 2 3 4 5 6 →