Fabrication of heterojunction solar cells by using microcrystalline hydrogenated silicon oxide film as an emitter

被引：18

作者：

Banerjee, Chandan ^{[1
]}

Sritharathikhun, Jaran ^{[1
]}

Yamada, Akira ^{[2
]}

Konagai, Makoto ^{[1
]}

机构：

[1] Tokyo Inst Technol, Dept Phys Elect, Meguro Ku, Tokyo 1528552, Japan

[2] Tokyo Inst Technol, Quantum Nanoelect Res Ctr, Meguro Ku, Tokyo 1528552, Japan

来源：

JOURNAL OF PHYSICS D-APPLIED PHYSICS | 2008年 / 41卷 / 18期

基金：

日本学术振兴会;

关键词：

D O I：

10.1088/0022-3727/41/18/185107

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Wide gap, highly conducting n-type hydrogenated microcrystalline silicon oxide (mu c-SiO : H) films were prepared by very high frequency plasma enhanced chemical vapour deposition at a very low substrate temperature (170 degrees C) as an alternative to amorphous silicon (a-Si : H) for use as an emitter layer of heterojunction solar cells. The optoelectronic properties of n-mu c-SiO : H films prepared for the emitter layer are dark conductivity = 0.51 S cm(-1) at 20 nm thin film, activation energy = 23 meV and E-04 = 2.3 eV. Czochralski-grown 380 mu m thick p-type < 1 0 0 > oriented polished silicon wafers with a resistivity of 1-10 Omega cm were used for the fabrication of heterojunction solar cells. Photovoltaic parameters of the device were found to be V-OC = 620 mV, J(SC) = 32.1mA cm(-2), FF = 0.77, eta = 15.32% (active area efficiency).

引用

页数：5

共 15 条

[1] Fabrication of microcrystalline cubic silicon carbide/crystalline silicon heterojunction solar cell by hot wire chemical vapor deposition [J].

Banerjee, Chandan ;

Narayanan, Karman Lakshmi ;

Haga, Keisuke ;

Sritharathikhun, Jaran ;

Miyajima, Shinsuke ;

Yamada, Akira ;

Konagai, Makoto .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2007, 46 (01) :1-6

[2] Preparation of (n)a-Si:H/(p)c-Si heterojunction solar cells [J].

Borchert, D ;

Grabosch, G ;

Fahrner, WR .

SOLAR ENERGY MATERIALS AND SOLAR CELLS, 1997, 49 (1-4) :53-59

[3]

Dhamrin M, 2006, WORL CON PHOTOVOLT E, P1395

[4] ANALYSIS OF SIH VIBRATIONAL ABSORPTION IN AMORPHOUS SIOXH (O-LESS-THAN-OR-EQUAL-TO-X-LESS-THAN-OR-EQUAL-TO-2.0) ALLOYS IN TERMS OF A CHARGE-TRANSFER MODEL [J].

HE, L ;

KURATA, Y ;

INOKUMA, T ;

HASEGAWA, S .

APPLIED PHYSICS LETTERS, 1993, 63 (02) :162-164

[5] Optimization and characterization of amorphous/crystalline silicon heterojunction solar cells [J].

Jensen, N ;

Hausner, RA ;

Bergmann, RB ;

Werner, JH ;

Rau, U .

PROGRESS IN PHOTOVOLTAICS, 2002, 10 (01) :1-13

[6] Sanyo's challenges to the development of high-efficiency HIT solar cells and the expansion of HIT business [J].

Maruyama, Eiji ;

Terakawa, Akira ;

Taguchi, Mikio ;

Yoshimine, Yukihiro ;

Ide, Daisuke ;

Baba, Toshiaki ;

Shima, Masaki ;

Sakata, Hitoshi ;

Tanaka, Makoto .

CONFERENCE RECORD OF THE 2006 IEEE 4TH WORLD CONFERENCE ON PHOTOVOLTAIC ENERGY CONVERSION, VOLS 1 AND 2, 2006, :1455-1460

[7]

Philipp H. R., 1972, Journal of Non-Crystalline Solids, V8-10, P627, DOI 10.1016/0022-3093(72)90202-5

[8]

ROCA F, 2004, 19 EUR PV SOL EN C P, P1321

[9] Surface passivation of crystalline and polycrystalline silicon using hydrogenated amorphous silicon oxide film [J].

Sritharathikhun, Jaran ;

Banerjee, Chandan ;

Otsubo, Michio ;

Sugiura, Tsutomu ;

Yamamoto, Hiroshi ;

Sato, Takehiko ;

Limmanee, Amornrat ;

Yamada, Akira ;

Konagai, Makoto .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2007, 46 (6A) :3296-3300

[10] Comparison of amorphous/crystalline heterojunction solar cells based on n- and p-type crystalline silicon [J].

Tucci, M ;

della Noce, M ;

Bobeico, E ;

Roca, F ;

de Cesare, G ;

Palma, E .

THIN SOLID FILMS, 2004, 451 :355-360

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