Quasi-two-dimensional threshold voltage model for junctionless cylindrical surrounding gate metal-oxide-semiconductor field-effect transistor with dual-material gate

被引：8

作者：

Li Cong ^{[1
]}

Zhuang Yi-Qi ^{[1
]}

Zhang Li ^{[1
]}

Jin Gang ^{[1
]}

机构：

[1] Xidian Univ, Sch Microelect, Xian 710071, Peoples R China

来源：

CHINESE PHYSICS B | 2014年 / 23卷 / 01期

基金：

中国国家自然科学基金;

关键词：

junctionless device; surrounding-gate MOSFET; dual-material gate; analytical model; NANOWIRE TRANSISTOR;

D O I：

10.1088/1674-1056/23/1/018501

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Based on the quasi-two-dimensional (2D) solution of Poisson's equation in two continuous channel regions, an analytical threshold voltage model for short-channel junctionless dual-material cylindrical surrounding-gate (JLDMCSG) metal-oxide-semiconductor field-effect transistor (MOSFET) is developed. Using the derived model, channel potential distribution, horizontal electrical field distribution, and threshold voltage roll-off of JLDMCSG MOSFET are investigated. Compared with junctionless single-material CSG (JLSGCSG) MOSFET, JLDMCSG MOSFET can effectively suppress short-channel effects and simultaneously improve carrier transport efficiency. It is also revealed that threshold voltage roll-off of JLDMCSG can be significantly reduced by adopting both a small oxide thickness and a small silicon channel radius. The model is verified by comparing its calculated results with that obtained from three-dimensional (3D) numerical device simulator ISE.

引用

页数：6

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