Stable Scaffolds for Reacting Si Nanowires with Further Organic Functionalities while Preserving Si-C Passivation of Surface Sites

被引：33

作者：

Assad, Ossama ^{[1
,2
]}

Puniredd, Sreenivasa Reddy ^{[1
,2
]}

Stelzner, Thomas ^{[3
]}

Christiansen, Silke ^{[3
,4
]}

Haick, Hossam ^{[1
,2
]}

机构：

[1] Technion Israel Inst Technol, Dept Chem Engn, IL-32000 Haifa, Israel

[2] Technion Israel Inst Technol, Russell Berrie Nanotechnol Inst, IL-32000 Haifa, Israel

[3] Inst Photon Technol eV, D-07745 Jena, Germany

[4] Max Planck Inst Mikrostruct Phys, D-06120 Halle, Germany

来源：

JOURNAL OF THE AMERICAN CHEMICAL SOCIETY | 2008年 / 130卷 / 52期

关键词：

D O I：

10.1021/ja807888k

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

We report on Si NWs modified by covalent scaffolds, via Si C bonds, that give nearly full coverage of the Si atop sites and, at the same time, provide a route for subsequent functionalization. The obtained CH3 CH CH Si NWs exhibit superior oxidation resistance over Si NWs that are modified with CH3 or CH3 C C functionalities, which give nearly full coverage of the Si atop site too.

引用

页码：17670 / +

页数：3

共 10 条

[1] Alkylation of Si surfaces using a two-step halogenation Grignard route
Bansal, A
Li, XL
Lauermann, I
Lewis, NS
Yi, SI
Weinberg, WH
[J]. JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, 1996, 118 (30) : 7225 - 7226
[2] Chemical Passivation of Silicon Nanowires with C1-C6 Alkyl Chains through Covalent Si-C Bonds
Bashouti, Muhammad Y.
Stelzner, Thomas
Berger, Andreas
Christiansen, Silke
Haick, Hossam
[J]. JOURNAL OF PHYSICAL CHEMISTRY C, 2008, 112 (49) : 19168 - 19172
[3] Electrical characteristics and chemical stability of non-oxidized, methyl-terminated silicon nanowires
Haick, Hossam
Hurley, Patrick T.
Hochbaum, Allon I.
Yang, Peidong
Lewis, Nathan S.
[J]. JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, 2006, 128 (28) : 8990 - 8991
[4] Multibit memory using self-assembly of mixed ferrocene/porphyrin monolayers on silicon
Li, QL
Mathur, G
Gowda, S
Surthi, S
Zhao, Q
Yu, LH
Lindsey, JS
Bocian, DF
Misra, V
[J]. ADVANCED MATERIALS, 2004, 16 (02) : 133 - +
[5] Functional organotrimethoxysilane derivative with strong intermolecular π-π interaction:: One-pot grafting reaction on oxidized silicon substrates
Nam, Haehyun
Granier, Michel
Boury, Bruno
Park, Soo Young
[J]. LANGMUIR, 2006, 22 (17) : 7132 - 7134
[6] Comparative study on reactions and self-directed growth mechanisms of styrene molecules on H-terminated Si(111) and Si(100): Combining quantum chemistry and molecular mechanics simulations
Pei, Y
Ma, J
[J]. LANGMUIR, 2006, 22 (07) : 3040 - 3048
[7] Growth of silicon nanowires by chemical vapour deposition on gold implanted silicon substrates
Stelzner, Th
Andrea, G.
Wendler, E.
Wesch, W.
Scholz, R.
Goesele, U.
Christiansen, S.
[J]. NANOTECHNOLOGY, 2006, 17 (12) : 2895 - 2898
[8] FTIR spectroscopic studies of the stabilities and reactivities of hydrogen-terminated surfaces of silicon nanowires
Sun, XH
Wang, SD
Wong, NB
Ma, DDD
Lee, ST
Teo, BK
[J]. INORGANIC CHEMISTRY, 2003, 42 (07) : 2398 - 2404
[9] Bioreactive self-assembled monolayers on hydrogen-passivated Si(111) as a new class of atomically flat substrates for biological scanning probe microscopy
Wagner, P
Nock, S
Spudich, JA
Volkmuth, WD
Chu, S
Cicero, RL
Wade, CP
Linford, MR
Chidsey, CED
[J]. JOURNAL OF STRUCTURAL BIOLOGY, 1997, 119 (02) : 189 - 201
[10] Low-temperature STM images of methyl-terminated Si(111) surfaces
Yu, HB
Webb, LJ
Ries, RS
Solares, SD
Goddard, WA
Heath, JR
Lewis, NS
[J]. JOURNAL OF PHYSICAL CHEMISTRY B, 2005, 109 (02) : 671 - 674

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