Transformation of a metal-insulator-silicon structure into a resonant-tunneling diode

被引：5

作者：

Kareva, G. G. ^{[1
]}

Vexler, M. I. ^{[2
]}

Illarionov, Yu. Yu. ^{[2
,3
]}

机构：

[1] St Petersburg State Univ, St Petersburg 198504, Russia

[2] AF Ioffe Phys Tech Inst, St Petersburg 194021, Russia

[3] TU Vienna, Inst Microelect, A-1040 Vienna, Austria

来源：

MICROELECTRONIC ENGINEERING | 2013年 / 109卷

关键词：

Metal-thin oxide-silicon structure; Near-interface quantum well; Electron resonant tunneling;

D O I：

10.1016/j.mee.2013.03.063

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A metal-oxide-semiconductor diode, with two tunnel-transparent barriers due to heavily doped silicon and nanometer-thin insulator, has been shown to exhibit steps or peaks in the static current-voltage curves. For the positive gate bias, appearance of these features in both simulations and measurements testifies to resonant tunneling of electrons from the silicon valence band via the discrete levels of the near-interface quantum well into the metal in the regime of deep depletion in silicon space charge region. (C) 2013 Elsevier B.V. All rights reserved.

引用

页码：270 / 273

页数：4