ZnO plasmonics for telecommunications

被引：40

作者：

Look, D. C. ^{[1
,2
,3
]}

Leedy, K. D. ^{[3
]}

机构：

[1] Wright State Univ, Semicond Res Ctr, Dayton, OH 45435 USA

[2] Wyle Labs Inc, Dayton, OH 45431 USA

[3] USAF, Res Lab, Sensors Directorate, Wright Patterson AFB, OH 45433 USA

来源：

APPLIED PHYSICS LETTERS | 2013年 / 102卷 / 18期

基金：

美国国家科学基金会;

关键词：

D O I：

10.1063/1.4804984

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Plasmonic resonances (kres's) at the telecommunication wavelengths of 1.3 and 1.55 mu m can be accurately produced in ZnO layers grown at 200 degrees C by pulsed laser deposition in pure Ar ambient using a ZnO target with 3 wt. % Ga2O3, and then annealed in air to produce Hall-effect-determined carrier concentrations 8.8 and 6.0 x 10(20) cm(-3), respectively. Appropriate values of concentration and Hall mobility for a desired lambda(res) can be conveniently determined from a "plasmonic resonance phase diagram," generated from the Drude equation and mobility theory. Values of lambda(res) as low as 1 mu m can be attained in ZnO. (C) 2013 AIP Publishing LLC.

引用

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