A Novel Reconfigurable Quad-band Power Amplifier with Reconfigurable Biasing Network and LTCC Substrates

被引:0
|
作者
Fukuda, Atsushi [1 ]
Okazaki, Hiroshi [1 ]
Narahashi, Shoichi [1 ]
机构
[1] NTT DoCoMo Inc, Yokosuka, Kanagawa 2398536, Japan
来源
2008 IEEE MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM DIGEST, VOLS 1-4 | 2008年
关键词
matching network; biasing network; microelectro mechanical devices; multi-band; switches; power amplifiers;
D O I
暂无
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
This paper presents a novel MEMS-based reconfigurable multi-band power amplifier (PA) that employs a newly proposed reconfigurable biasing network and partitioned LTCC substrates. The biasing network comprises transmission lines, capacitors, and switches. Because DC bias current does not flow through switches, the proposed network functions as a multi-band low-loss biasing network. The partitioned multi-layer substrates improve the degree of freedom for further circuit design. According to the proposed design scheme, a quad-band PA is designed and fabricated. The fabricated 1W-class PA achieves high output power of 30 dBm and maximum power added efficiency of over 40% in the 1, 1.5, 2, and 2.5-GHz bands.
引用
收藏
页码:1129 / 1132
页数:4
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