Carbon nanotubes as field emission sources

被引：356
作者：
Milne, WI
Teo, KBK
Amaratunga, GAJ
Legagneux, P
Gangloff, L
Schnell, JP
Semet, V
Binh, VT
Groening, O
机构：
[1] Univ Cambridge, Dept Engn, Cambridge CB2 1PZ, England
[2] Thales Res & Technol, Orsay, France
[3] Univ Lyon 1, Lab Emiss Elect, F-69622 Villeurbanne, France
[4] EMPA Fed Labs Mat Resting & Res, Abt 127, CH-3602 Thun, Switzerland
来源：
JOURNAL OF MATERIALS CHEMISTRY | 2004年 / 14卷 / 06期
关键词：
D O I：
10.1039/b314155c
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
Micro and nano-structurally rich carbon materials are alternatives to conventional metal/silicon tips for field emission sources. In particular, carbon nanotubes exhibit extraordinary field emission properties because of their high electrical conductivity, their high aspect ratio "whisker-like'' shape for optimum geometrical field enhancement, and remarkable thermal stability. This paper will review the PECVD growth process, and the microfabrication techniques needed to produce well defined carbon nanotube based micro-electron sources for use in novel parallel e-beam lithography and high frequency microwave amplifier systems.
引用
收藏
页码：933 / 943
页数：11
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