Formation of large-grain-sized BaSi2 epitaxial layers grown on Si(111) by molecular beam epitaxy

被引：6

作者：

Baba, M. ^{[1
]}

Toh, K. ^{[1
]}

Toko, K. ^{[1
]}

Hara, K. O. ^{[2
]}

Usami, N. ^{[2
,4
]}

Saito, N. ^{[3
]}

Yoshizawa, N. ^{[3
]}

Suemasu, T. ^{[1
,4
]}

机构：

[1] Univ Tsukuba, Inst Appl Phys, Tsukuba, Ibaraki 3058573, Japan

[2] Tohoku Univ, Inst Mat Res, Sendai, Miyagi 9808577, Japan

[3] AIST, Electron Microscope Facil, IBEC Innovat Platform, Tsukuba, Ibaraki 3058569, Japan

[4] Japan Sci & Technol Agcy, CREST, Chiyoda Ku, Tokyo 1020075, Japan

来源：

JOURNAL OF CRYSTAL GROWTH | 2013年 / 378卷

关键词：

Large grain; MBE; Semiconducting silicides; BaSi2; Solar cell; THIN-FILMS; HIGH-PRESSURES; SILICON; BOUNDARIES;

D O I：

10.1016/j.jcrysgro.2012.12.176

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

BaSi2 epitaxial films were grown on Si(1 1 1) substrates by a two-step growth method including reactive deposition epitaxy (RDE) and molecular beam epitaxy (MBE). To enlarge the grain size of BaSi2, the Ba deposition rate and duration were varied from 025 to 1.0 nm/min and from 5 to 120 min during RDE, respectively. The effect of post-annealing was also investigated at 760 degrees C for 10 min. Plan-view transmission electron micrographs indicated that the grain size in the MBE-grown BaSi2 was significantly increased up to approximately 4.0 mu m, which is much larger than 0.2 mu m, reported previously. (c) 2013 Elsevier B.V. All rights reserved.

引用

页码：193 / 197

页数：5

共 17 条

[1] Investigation of grain boundaries in BaSi2 epitaxial films on Si(111) substrates using transmission electron microscopy and electron-beam-induced current technique [J].

Baba, Masakazu ;

Toh, Katsuaki ;

Toko, Kaoru ;

Saito, Noriyuki ;

Yoshizawa, Noriko ;

Jiptner, Karolin ;

Sekiguchi, Takashi ;

Hara, Kosuke O. ;

Usami, Noritaka ;

Suemasu, Takashi .

JOURNAL OF CRYSTAL GROWTH, 2012, 348 (01) :75-79

[2] Electron-beam-induced current study of grain boundaries in multicrystalline silicon [J].

Chen, J ;

Sekiguchi, T ;

Yang, D ;

Yin, F ;

Kido, K ;

Tsurekawa, S .

JOURNAL OF APPLIED PHYSICS, 2004, 96 (10) :5490-5495

[3] Improved photoresponsivity of semiconducting BaSi2 epitaxial films grown on a tunnel junction for thin-film solar cells [J].

Du, Weijie ;

Suzuno, Mitsushi ;

Khan, M. Ajmal ;

Toh, Katsuaki ;

Baba, Masakazu ;

Nakamura, Kotaro ;

Toko, Kaoru ;

Usami, Noritaka ;

Suemasu, Takashi .

APPLIED PHYSICS LETTERS, 2012, 100 (15)

[4] CRYSTAL-STRUCTURE OF BARIUM DISILICIDE AT HIGH-PRESSURES [J].

EVERS, J ;

OEHLINGER, G ;

WEISS, A .

ANGEWANDTE CHEMIE-INTERNATIONAL EDITION IN ENGLISH, 1977, 16 (09) :659-660

[5] Fabrication and characterization of highly efficient thin-filin polycrystalline-silicon solar cells based on aluminium-induced crystallization [J].

Gordon, I. ;

Carnel, L. ;

Van Gestel, D. ;

Beaucarne, G. ;

Poortmans, J. .

THIN SOLID FILMS, 2008, 516 (20) :6984-6988

[6] Realization of Large-Domain Barium Disilicide Epitaxial Thin Film by Introduction of Miscut to Si(111) Substrate [J].

Hara, Kosuke O. ;

Usami, Noritaka ;

Toh, Katsuaki ;

Toko, Kaoru ;

Suemasu, Takashi .

JAPANESE JOURNAL OF APPLIED PHYSICS, 2012, 51 (10)

[7] Phase transitions of BaSi2 at high pressures and high temperatures [J].

Imai, M ;

Hirano, T ;

Kikegawa, T ;

Shimomura, O .

PHYSICAL REVIEW B, 1998, 58 (18) :11922-11926

[8] Epitaxial growth of semiconducting BaSi2 thin films on Si(111) substrates by reactive deposition epitaxy [J].

Inomata, Y ;

Nakamura, T ;

Suemasu, T ;

Hasegawa, F .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2004, 43 (7A) :4155-4156

[9] Epitaxial growth of semiconducting BaSi2 films on Si(III) substrates by molecular beam epitaxy [J].

Inomata, Y ;

Nakamura, T ;

Suemasu, T ;

Hasegawa, F .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 2004, 43 (4A) :L478-L481

[10] Photoresponse Properties of Semiconducting BaSi2 Epitaxial Films Grown on Si(111) Substrates by Molecular Beam Epitaxy [J].

Matsumoto, Yuta ;

Tsukada, Dai ;

Sasaki, Ryo ;

Takeishi, Mitsutomo ;

Suemasu, Takashi .

APPLIED PHYSICS EXPRESS, 2009, 2 (02)

← 1 2 →