Interaction between conduction band edge and nitrogen states probed by carrier effective-mass measurements in GaAs1-xNx

被引：109
作者：
Masia, F
Pettinari, G
Polimeni, A
Felici, M
Miriametro, A
Capizzi, M
Lindsay, A
Healy, SB
O'Reilly, EP
Cristofoli, A
Bais, G
Piccin, M
Rubini, S
Martelli, F
Franciosi, A
Klar, PJ
Volz, K
Stolz, W
机构：
[1] Univ Roma La Sapienza, CNISM, I-00185 Rome, Italy
[2] Univ Roma La Sapienza, Dipartimento Fis, I-00185 Rome, Italy
[3] Tyndall Natl Inst, Cork, Ireland
[4] CNR, INFM, Lab Nazl TASC, I-34012 Trieste, Italy
[5] Univ Trieste, Ctr Excellence Nanostruct Mat, I-34127 Trieste, Italy
[6] Univ Marburg, Dept Phys, D-35032 Marburg, Germany
[7] Univ Marburg, Ctr Mat Sci, D-35032 Marburg, Germany
来源：
PHYSICAL REVIEW B | 2006年 / 73卷 / 07期
关键词：
D O I：
10.1103/PhysRevB.73.073201
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The electron effective mass, m(e), has been determined by magnetophotoluminescence in as-grown and hydrogenated GaAs1-xNx samples for a wide range of nitrogen concentrations (from x < 0.01% to x=1.78%). A modified k center dot p model, which takes into account hybridization effects between N cluster states and the conduction band edge, reproduces quantitatively the experimental m(e) values up to x <= 0.6%. Experimental and theoretical evidence is provided for the N complexes responsible for the nonmonotonic and initially puzzling compositional dependence of the electron mass.
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