Current-perpendicular-to-plane spin valve;
perpendicular magnetic anisotropy;
spin transfer switching;
spin valves;
D O I:
10.1109/TMAG.2008.2002615
中图分类号:
TM [电工技术];
TN [电子技术、通信技术];
学科分类号:
0808 ;
0809 ;
摘要:
We evaluated the magneto-optical properties of spin-valve (SV) stacks with perpendicular magnets comprised of a Gd-Fe (4-30 nm) free layer and a Tb-Fe-Co/CoFe pinned layer, and the spin-transfer switching properties of current-perpendicular-to-plane (CPP) SVs with the perpendicular magnets. The Gd-Fe free layer had polar Kerr rotation theta(k) of 0.12 degrees at a thickness of 10 nm. The theta(k) reduced with a decrease in GdFe thickness and the sign of theta(k) switched from positive to negative at a Gd-Fe thickness of 6 nm or thinner. Coercivity (H.) was maximum and saturation magnetization (M-a) was minimum at a thickness of 8 rim. These phenomena may be explained by an inhomogeneous Gd-Fe composition. The CPP spin valves with the Gd-Fe (10 nm) free layer had a magneto-resistance (MR) of 0.038%. The free layer of a CPP SV device was switched by a pulsed current, which exhibited intrinsic switching current densities of J(c0)_(P-AP) = -3.3 x 10(7) A/cm(2) and J(c0)_(AP-P) = 4.3 x 10(7) A/cm(2) with a thermal stability of 75, which is above the required value of 40. Perpendicular magnets are very useful for obtaining large magneto-optical signals from nano-magnets driven by spin-transfer switching.
机构:
Fudan Univ, State Key Lab Adv Photon Mat & Devices, Shanghai 200433, Peoples R China
Fudan Univ, Dept Opt Sci & Engn, Shanghai 200433, Peoples R ChinaFudan Univ, State Key Lab Adv Photon Mat & Devices, Shanghai 200433, Peoples R China
Li, Xuan
Zhang, Zongzhi
论文数: 0引用数: 0
h-index: 0
机构:
Fudan Univ, State Key Lab Adv Photon Mat & Devices, Shanghai 200433, Peoples R China
Fudan Univ, Dept Opt Sci & Engn, Shanghai 200433, Peoples R ChinaFudan Univ, State Key Lab Adv Photon Mat & Devices, Shanghai 200433, Peoples R China
Zhang, Zongzhi
Jin, Q. Y.
论文数: 0引用数: 0
h-index: 0
机构:
Fudan Univ, State Key Lab Adv Photon Mat & Devices, Shanghai 200433, Peoples R China
Fudan Univ, Dept Opt Sci & Engn, Shanghai 200433, Peoples R ChinaFudan Univ, State Key Lab Adv Photon Mat & Devices, Shanghai 200433, Peoples R China
Jin, Q. Y.
Liu, Yaowen
论文数: 0引用数: 0
h-index: 0
机构:
Tongji Univ, Dept Phys, Shanghai 200092, Peoples R ChinaFudan Univ, State Key Lab Adv Photon Mat & Devices, Shanghai 200433, Peoples R China